BDX92 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDX92/94/96
DESCRIPTION
- Collector Current -IC= -10A
- Collector-Emitter Breakdown Voltage- : V (BR)CEO = -60V(Min)- BDX92 -80V(Min)- BDX94 -100V(Min)- BDX96
- Complement to Type BDX91/93/95
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX92 -60 BDX94 -80 VCBO Collector-Base Voltage BDX96 -100 V BDX92 -60 BDX94 -80 VCEO Collector-Emitter Voltage BDX96 -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.94 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDX92/94/96
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX92 -45 BDX94 -60 V(BR)CEO Collector-Emitter Breakdown Voltage BDX96 IC= -30mA ;IB=0 B -80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -1A B -1.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -5A; IB= -1A B -2.0 V VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -2V -1.4 V BDX92 VCB= -60V; IE= 0 VCB= -30V; IE= 0; TC= 150℃ -0.1 -2.0 BDX94 VCB= -80V; IE= 0 VCB= -40V; IE= 0; TC= 150℃ -0.1 -2.0ICBO Collector Cutoff Current BDX96 VCB= -100V; IE= 0 VCB= -50V; IE= 0; TC= 150℃ -0.1 -2.0 mA BDX92 VCE= -60V;IB= 0 BDX94 VCE= -80V;IB= 0 ICEO Collector Cutoff Current BDX96 VCE= -100V;IB= 0 -0.2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -3A; VCE= -2V 20 hFE-2 DC Current Gain IC= -5A; VCE= -2V 10 fT Current-Gain—Bandwidth Product IC= -1A; VCE= -10V 4 MHz Switching times ton Turn-on Time 1.0 μs toff Turn-off Time IC= -3A; IB1= -IB2= -0.3A 2.0 μs isc Website：www.iscsemi.cn 2