BDX91 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDX91/93/95
DESCRIPTION
- Collector Current -IC= 10A
- Collector-Emitter Breakdown Voltage- : V (BR)CEO = 60V(Min)- BDX91 80V(Min)- BDX93 100V(Min)- BDX95
- Complement to Type BDX92/94/96
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX91 60 BDX93 80 VCBO Collector-Base Voltage BDX95 100 V BDX91 60 BDX93 80 VCEO Collector-Emitter Voltage BDX95 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.94 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDX91/93/95
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX91 45 BDX93 60 V(BR)CEO Collector-Emitter Breakdown Voltage BDX95 IC= 30mA ;IB=0 B V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 2V 1.4 V BDX91 VCB= 60V; IE= 0 VCB= 30V; IE= 0; TC= 150℃ 0.1 2.0 BDX93 VCB= 80V; IE= 0 VCB= 40V; IE= 0; TC= 150℃ 0.1
2.0 ICBO
BDX95 VCB= 100V; IE= 0 VCB= 50V; IE= 0; TC= 150℃ 0.1 2.0 mA BDX91 VCE= 60V;IB= 0 BDX93 VCE= 80V;IB= 0 ICEO Collector Cutoff Current BDX95 VCE= 100V;IB= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 0.1 mA hFE-1 DC Current Gain IC= 3A; VCE= 2V 20 hFE-2 DC Current Gain IC= 5A; VCE= 2V 10 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 4 MHz Switching times ton Turn-on Time 1.0 μs toff Turn-off Time IC= 3A; IB1= -IB2= 0.3A 2.0 μs isc Website：www.iscsemi.cn 2