BDX87C STMICROELECTRONICS | Alldatasheet
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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BDX87C is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary PNP types is the BDX88C. INTERNAL SCHEMATIC DIAGRAM June 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDX87C PNP BDX88C V CBO Collector-base Voltage (IE = 0) 100 V V CEO Collector-emitter Voltage (IB = 0) 100 V V EBO Emitter-base Voltage (IC = 0) 5 V IC Collector Current 12 A ICM Collector Peak Current (repetitive) 18 A IB Base Current 0.2 A P tot Total Dissipation at Tc ≤ 25 oC 120 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC TO-3 R 1 Typ. = 6 K Ω R2 Typ. = 55 Ω
R thj-case Thermal Resistance Junction-case Max 1.45 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) V CB = 100 V V CB = 100 V T case = 150 oC 0.5 mA mA ICEO Collector Cut-off Current (IB = 0) V CB = 50 V 1 mA IEBO Emitter Cut-off Current (IC = 0) V EB = 5 V 1m A V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA 100 V V CE(sat)∗ Collector-emitter Saturation Voltage IC = 6 A IB = 24 mA IC = 12 A IB = 120 mA V V V BE(sat)∗ Base-emitter Saturation Voltage IC = 12 A IB =120 mA 4 V V BE ∗ Base-emitter Voltage I C = 6 A VCE = 3 V 2.8 V hFE ∗ DC Current Gain I C = 5 A VCE = 3 V IC = 6 A VCE = 3 V IC = 12 A VCE = 3 V 1000 750 100 18000 V F∗ Parallel-diode Forward Voltage IF = 3 A IF = 8 A 2.5 1.8 V V hfe∗ Small SignalCurrent Gain IC = 5 A VCE = 3 V f = 1MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. BDX87C-BDX88C
DIM. mm inch A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 E B R C DAP G N VU O P003F TO-3 MECHANICAL DATA BDX87C-BDX88C
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . . . BDX87C-BDX88C