BDX88 ISC | Alldatasheet

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Technical content

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX88/A/B/C

DESCRIPTION

  • High DC Current Gain- : h FE= 750(Min)@ IC= -6A
  • Collector-Emitter Sustaining Voltage- : V CEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C
  • Complement to Type BDX87/A/B/C

APPLICATIONS

  • Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX88 -45 BDX88A -60 BDX88B -80 VCBO Collector-Base Voltage BDX88C -100 V BDX88 -45 BDX88A -60 BDX88B -80 VCEO Collector-Emitter Voltage BDX88C -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -18 A IB B Base Current -200 mA PC Collector Power Dissipation @ TC=25℃ 120 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.45 ℃/W isc Website：www.iscsemi.cn

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX88/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX88 -45 BDX88A -60 BDX88B -80 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX88C IC= -100mA; IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB= -24mA B -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -12A; IB= -120mA -3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -12A; IB= -120mA -4.0 V VBE(on) Base-Emitter On Voltage IC= -6A; VCE= -3V -2.8 V BDX88 VCB= -45V; IE= 0 VCB= -45V; IE= 0; TC= 150℃ -0.5 -5.0 BDX88A VCB= -60V; IE= 0 VCB= -60V; IE= 0; TC= 150℃ -0.5 -5.0 BDX88B VCB= -80V; IE= 0 VCB= -80V; IE= 0; TC= 150℃ -0.5 -5.0 ICBO Collector Cutoff Current BDX88C VCB= -100V; IE= 0 VCB= -100V; IE= 0; TC= 150℃ -0.5 -5.0 mA BDX88 VCE= -22V; IB= 0 B BDX88A VCE= -30V; IB= 0 B BDX88B VCE= -40V; IB= 0 B ICEO Collector Cutoff Current BDX88C VCE= -50V; IB= 0 B -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2.0 mA hFE-1 DC Current Gain IC= -5A; VCE= -3V 1000 hFE-2 DC Current Gain IC= -6A; VCE= -3V 750 18000 hFE-3 DC Current Gain IC= -12A; VCE= -3V 100 isc Website：www.iscsemi.cn 2