BDX85 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX85/A/B/C
DESCRIPTION
- High DC Current Gain- : h FE= 750(Min)@ IC= 3A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V(Min)- BDX85B; 100V(Min)- BDX85C
- Complement to Type BDX86/A/B/C
APPLICATIONS
- Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX85 45 BDX85A 60 BDX85B 80 VCBO Collector-Base Voltage BDX85C 100 V BDX85 45 BDX85A 60 BDX85B 80 VCEO Collector-Emitter Voltage BDX85C 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB B Base Current 100 mA PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.75 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX85/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX85 45 BDX85A 60 BDX85B 80 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX85C IC= 100mA; IB= 0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA B 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 40mA B 4.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 80mA B 4.0 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 3V 2.8 V BDX85 VCB= 45V; IE= 0 VCB= 45V; IE= 0; TC= 150℃ 0.5 5.0 BDX85A VCB= 60V; IE= 0 VCB= 60V; IE= 0; TC= 150℃ 0.5 5.0 BDX85B VCB= 80V; IE= 0 VCB= 80V; IE= 0; TC= 150℃ 0.5 5.0 ICBO Collector Cutoff Current BDX85C VCB= 100V; IE= 0 VCB= 100V; IE= 0; TC= 150℃ 0.5 5.0 mA BDX85 VCE= 22V; IB= 0 B BDX85A VCE= 30V; IB= 0 B BDX85B VCE= 40V; IB= 0 B ICEO Collector Cutoff Current BDX85C VCE= 50V; IB= 0 B 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 3A; VCE= 3V 1000 hFE-2 DC Current Gain IC= 4A; VCE= 3V 750 18000 hFE-3 DC Current Gain IC= 8A; VCE= 4V 200 isc Website：www.iscsemi.cn 2