BDX84 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX84/A/B/C
DESCRIPTION
- High DC Current Gain- : h FE= 1000(Min)@ IC= -5A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = -45V(Min)- BDX84; -60V(Min)- BDX84A -80V(Min)- BDX84B; -100V(Min)- BDX84C
APPLICATIONS
- Power switching
- Hammer drivers
- Series and shunt regulators
- Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX84 -45 BDX84A -60 BDX84B -80 VCBO Collector-Base Voltage BDX84C -100 V BDX84 -45 BDX84A -60 BDX84B -80 VCEO Collector-Emitter Voltage BDX84C -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB B Base Current -250 mA PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.4 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX84/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX84 -45 BDX84A -60 BDX84B -80 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX84C IC= -100mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -10mA B -2.0 V VBE(on)-1 Base-Emitter On Voltage IC= -5A; VCE= -3V -2.8 V VBE(on)-2 Base-Emitter On Voltage IC= -10A; VCE= -3V -4.5 V BDX84 VCE= -45V; VBE= 1.5V VCE= -45V; VBE= 1.5V; TC= 150℃ -0.5 -3.0 BDX84A VCE= -60V; VBE= 1.5V VCE= -60V; VBE= 1.5V; TC= 150℃ -0.5 -3.0 BDX84B VCE= -80V; VBE= 1.5V VCE= -80V; VBE= 1.5V; TC= 150℃ -0.5 -3.0 ICEV Collector Cutoff Current BDX84C VCE= -100V; VBE= 1.5V VCE= -100V; VBE= 1.5V; TC= 150℃ -0.5 -3.0 mA BDX84 VCE= -20V; IB= 0 B BDX84A VCE= -30V; IB= 0 B BDX84B VCE= -40V; IB= 0 B ICEO Collector Cutoff Current BDX84C VCE= -50V; IB= 0 B -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5.0 mA hFE-1 DC Current Gain IC= -1A; VCE= -3V 750 hFE-2 DC Current Gain IC= -5A; VCE= -3V 1000 hFE-3 DC Current Gain IC= -10A; VCE= -3V 250 isc Website：www.iscsemi.cn 2