BDX83 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX83/A/B/C
DESCRIPTION
- High DC Current Gain- : h FE= 1000(Min)@ IC= 5A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 45V(Min)- BDX83; 60V(Min)- BDX83A 80V(Min)- BDX83B; 100V(Min)- BDX83C
APPLICATIONS
- Power switching
- Hammer drivers
- Series and shunt regulators
- Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX83 45 BDX83A 60 BDX83B 80 VCBO Collector-Base Voltage BDX83C 100 V BDX83 45 BDX83A 60 BDX83B 80 VCEO Collector-Emitter Voltage BDX83C 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB B Base Current 250 mA PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.4 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX83/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX83 45 BDX83A 60 BDX83B 80 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX83C IC= 100mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA B 2.0 V VBE(on)-1 Base-Emitter On Voltage IC= 5A; VCE= 3V 2.8 V VBE(on)-2 Base-Emitter On Voltage IC= 10A; VCE= 3V 4.5 V BDX83 VCE= 45V; VBE= -1.5V VCE= 45V; VBE= -1.5V; TC= 150℃ 0.5 3.0 BDX83A VCE= 60V; VBE= -1.5V VCE= 60V; VBE= -1.5V; TC= 150℃ 0.5 3.0 BDX83B VCE= 80V; VBE= -1.5V VCE= 80V; VBE= -1.5V; TC= 150℃ 0.5 3.0 ICEV Collector Cutoff Current BDX83C VCE= 100V; VBE= -1.5V VCE= 100V; VBE= -1.5V; TC= 150℃ 0.5 3.0 mA BDX83 VCE= 20V; IB=0 B BDX83A VCE= 30V; IB=0 B BDX83B VCE= 40V; IB=0 B ICEO Collector Cutoff Current BDX83C VCE= 50V; IB=0 B 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 5.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 3V 750 hFE-2 DC Current Gain IC= 5A; VCE= 3V 1000 hFE-3 DC Current Gain IC= 10A; VCE= 3V 250 isc Website：www.iscsemi.cn 2