BDX77F ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDX77F
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO = 80V(Min)
- Complement to Type BDX78F
APPLICATIONS
- Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4 Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak s 12 A IB B Base Current 3 A PC Collector Power Dissipation @ TC=25℃ 32 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 6.3 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDX77F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.2A ;IB= 0 B 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;IE= 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.6A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 2V 1.5 V ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 0.2 mA ICBO Collector Cutoff Current VCB= VCBO;IE= 0 VCB= 1/2VCBO;IE= 0; TJ= 150℃ 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 0.5 mA hFE DC Current Gain IC= 2A ; VCE= 2V 30 fT Current-Gain—Bandwidth Product IC= 0.3A ; VCE= 3V, ftest= 1.0MHz 7.0 MHz Switching Times ton Turn-On Time 1 μs toff Turn-Off Time IC= 2A; IB1= -IB2= 0.2A 4 μs isc Website：www.iscsemi.cn 2