BDX73 ISC | Alldatasheet
Document overview
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor BDX73
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=80V(Min)
APPLICATIONS
- Designedforusein power linearandswitchingapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 80 V VCEO Collector-EmitterVoltage 80 V VEBO Emitter-BaseVoltage 6 V IC CollectorCurrent-Continuous 10 A IB BaseCurrent 5 A PC CollectorPowerDissipation @TC=25℃ 75 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.67 ℃/W Rthj-a ThermalResistance,JunctiontoAmbient 70 ℃/W
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor BDX73 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=30mA;IB=0 80 V V(BR)CBO Collector-BaseBreakdown Voltage IC=1mA;IE=0 80 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=1mA;IC=0 8 V VCE(sat) Collector-EmitterSaturationVoltage IC=4A;IB=0.4A 1.0 V VBE(on) Base-EmitterOnVoltage IC=4A;VCE=2V 2.5 V ICEO CollectorCutoffCurrent VCE=80V;IB=0 0.1 mA ICBO CollectorCutoffCurrent VCB=80V;IE=0 0.01 mA IEBO EmitterCutoffCurrent VEB=8V;IC=0 0.5 mA hFE 1 DCCurrentGain IC=2A;VCE=2V 20 80 hFE 2 DCCurrentGain IC=4A;VCE=4V 15 hFE 3 DCCurrentGain IC=10A;VCE=4V 5