BDX69 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX69/A/B/C
DESCRIPTION
- High DC Current Gain- : h FE= 1000(Min)@ IC= 20A
- Low Saturation Voltage
- Complement to Type BDX68/A/B/C
APPLICATIONS
- Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX69 80 BDX69A 100 BDX69B 120 VCBO Collector-Base Voltage BDX69C 140 V BDX69 60 BDX69A 80 BDX69B 100 VCEO Collector-Emitter Voltage BDX69C 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB B Base Current 500 mA PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX69/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX69 60 BDX69A 80 BDX69B 100 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX69C IC= 100mA ; L= 25mH 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20A; IB= 80mA 2.0 V VBE(on) Base-Emitter On Voltage IC= 20A; VCE= 3V 2.5 V BDX69 VCB= 80V; IE= 0 VCB= 40V; IE= 0; TC=200℃ 2.0 BDX69A VCB= 100V; IE= 0 VCB= 50V; IE= 0; TC=200℃ 2.0 BDX69B VCB= 120V; IE= 0 VCB= 60V; IE= 0; TC=200℃ 2.0 ICBO Collector Cutoff Current BDX69C VCB= 140V; IE= 0 VCB= 70V; IE= 0; TC=200℃ 2.0 mA BDX69 VCE= 30V; IB=0 B BDX69A VCE= 40V; IB=0 B BDX69B VCE= 50V; IB=0 B ICEO Collector Cutoff Current BDX69C VCE= 60V; IB=0 B 6.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 mA hFE-1 DC Current Gain IC= 5A; VCE= 3V 3000 hFE-2 DC Current Gain IC= 20A; VCE= 3V 1000 hFE-3 DC Current Gain IC= 30A; VCE= 3V 4000 COB Output Capacitance IE= 0 ; VCB= 10V, ftest= 1.0MHz 600 pF isc Website：www.iscsemi.cn 2