BDX68 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX68/A/B/C
DESCRIPTION
- High DC Current Gain- : h FE= 1000(Min)@ IC= -20A
- Low Saturation Voltage
- Complement to Type BDX69/A/B/C
APPLICATIONS
- Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX68 -80 BDX68A -100 BDX68B -120 VCBO Collector-Base Voltage BDX68C -140 V BDX68 -60 BDX68A -80 BDX68B -100 VCEO Collector-Emitter Voltage BDX68C -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A ICM Collector Current-Peak -40 A IB B Base Current -500 mA PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX68/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX68 -60 BDX68A -80 BDX68B -100 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX68C IC= -100mA; L= 25mH -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -20A; IB= -80mA -2.0 V VBE(on) Base-Emitter On Voltage IC= -20A; VCE= -3V -2.5 V BDX68 VCB= -80V; IE= 0 VCB= -40V; IE= 0; TC=200℃ -2.0 -10 BDX68A VCB= -100V; IE= 0 VCB= -50V; IE= 0; TC=200℃ -2.0 -10 BDX68B VCB= -120V; IE= 0 VCB= -60V; IE= 0; TC=200℃ -2.0 -10 ICBO Collector Cutoff Current BDX68C VCB= -140V; IE= 0 VCB= -70V; IE= 0; TC=200℃ -2.0 -10 mA BDX68 VCE= -30V; IB= 0 B BDX68A VCE= -40V; IB= 0 B BDX68B VCE= -50V; IB= 0 B ICEO Collector Cutoff Current BDX68C VCE= -60V; IB= 0 B -6.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 mA hFE-1 DC Current Gain IC= -5A; VCE= -3V 3000 hFE-2 DC Current Gain IC= -20A; VCE= -3V 1000 hFE-3 DC Current Gain IC= -30A; VCE= -3V 1000 COB Output Capacitance IE= 0 ; VCB= -10V, ftest= 1.0MHz 600 pF isc Website：www.iscsemi.cn 2