BDX67B ISC | Alldatasheet
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Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67B
DESCRIPTION
- With TO-3 package
- High current capability
- DARLINGTON
APPLICATIONS
- Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 16 A ICM Collector current(peak) 20 A IB Base current 0.25 A PT Total power dissipation TC=25℃ 117 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.17 ℃/W Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67B CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A ; IB=0;L=25mH 100 V VCEsat Collector-emitter saturation voltage I C=10A ;IB=0.04A 2 V ICBO Collector cut-off current VCB=60V; IE=0 TC=150℃ 1 5 mA ICEO Collector cut-off current V CE=50V; IB=0 3 mA IEBO Emitter cut-off current V EB=5V; IC=0 3 mA Switching times ton Turn-on time 1.0 μs toff Turn-off time IC=-10A ; IB1=-IB2=0.04A VCC=12V ; 3.5 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67B PACKAGE OUTLINE Fig.2 Outline dimensions