BDX67A ISC | Alldatasheet
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNDarlingtonPowerTransistor BDX67/A/B/C
DESCRIPTION
- HighDCCurrentGain- :hFE=1000(Min)@ IC=10A
- LowSaturation Voltage
- ComplementtoType BDX66/A/B/C
APPLICATIONS
- Designedforaudio outputstagesand generalamplifier andswitchingapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage BDX67 80 V BDX67A 100 BDX67B 120 BDX67C 140 VCEO Collector-EmitterVoltage BDX67 60 V BDX67A 80 BDX67B 100 BDX67C 120 VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 16 A ICM CollectorCurrent-Peak 20 A IB BaseCurrent 250 mA PC CollectorPowerDissipation @TC=25℃ 150 W TJ JunctionTemperature 200 ℃ Tstg StorageTemperatureRange -65~200 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.17 ℃/W
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNDarlingtonPowerTransistor BDX67/A/B/C ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter SustainingVoltage BDX67 IC=50mA;L=25mH V BDX67A 80 BDX67B 100 BDX67C 120 VCE(sat) Collector-EmitterSaturationVoltage IC=10A;IB=40mA 2.0 V VBE(on) Base-EmitterOnVoltage IC=10A;VCE=3V 2.5 V ICBO Collector CutoffCurrent BDX67 VCB=80V;IE=0 VCB=80V;IE=0;TC=150℃ 1.0 5.0 mA BDX67A VCB=100V;IE=0 VCB=100V;IE=0;TC=150℃ 1.0 5.0 BDX67B VCB=120V;IE=0 VCB=120V;IE=0;TC=150℃ 1.0 5.0 BDX67C VCB=140V;IE=0 VCB=140V;IE=0;TC=150℃ 1.0 5.0 ICEO CollectorCutoffCurrent VCE=1/2VCEO(Max);IB=0 1.0 mA IEBO EmitterCutoffCurrent VEB=5V;IC=0 5.0 mA hFE-1 DCCurrentGain IC=1A;VCE=3V 5200 hFE-2 DCCurrentGain IC=10A;VCE=3V 1000 hFE-3 DCCurrentGain IC=16A;VCE=3V 4000 VECF C-EDiodeForwardVoltage IF=10A 2.5 V COB OutputCapacitance IE=0;VCB=10V,ftest=1.0MHz 300 pF