BDX65B ISC | Alldatasheet
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNDarlingtonPowerTransistor BDX65/A/B/C
DESCRIPTION
- CollectorCurrent-IC=12A
- HighDCCurrentGain-hFE=1000(Min)@ IC=5A
- ComplementtoType BDX64/A/B/C
APPLICATIONS
- Designedforaudio outputstagesand generalamplifier andswitchingapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage BDX65 80 V BDX65A 100 BDX65B 120 BDX65C 140 VCEO Collector-Emitter Voltage BDX65 60 V BDX65A 80 BDX65B 100 BDX65C 120 VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 12 A ICM CollectorCurrent-Peak 16 A IB BaseCurrent-Continuous 0.2 A PC CollectorPowerDissipation @TC=25℃ 117 W TJ JunctionTemperature 200 ℃ Tstg StorageTemperatureRange -55~200 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.5 ℃/W
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNDarlingtonPowerTransistor BDX65/A/B/C ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter SustainingVoltage BDX65 IC=50mA;IB=0 V BDX65A 80 BDX65B 100 BDX65C 120 VCE(sat) Collector-EmitterSaturationVoltage IC=5A;IB=20mA 2 V VBE(on) Base-EmitterOnVoltage IC=5A;VCE=3V 2.5 V VECF C-EDiodeForwardVoltage IF=5A 1.2 V ICEO CollectorCutoffCurrent VCE=1/2VCEOmax;IB=0 0.2 mA ICBO CollectorCutoffCurrent VCB=VCEOmax;IE=0 VCB=1/2VCBOmax;IE=0;TJ=200℃ 0.4 3 mA IEBO EmitterCutoffCurrent VEB=5V;IC=0 5 mA hFE-1 DCCurrentGain IC=1A;VCE=3V 1500 hFE-2 DCCurrentGain IC=5A;VCE=3V 1000 hFE-3 DCCurrentGain IC=10A;VCE=3V 1500 fT Current-Gain—BandwidthProduct IC=5A;VCE=3V 7 MHz Switchingtimes ton Turn-onTime IC=5A;IB1=-IB2=20mA 1 μs toff Turn-offTime 6 μs