BDX63 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX63/A/B/C
DESCRIPTION
- Collector Current -IC= 8A
- High DC Current Gain-hFE= 1000(Min)@ IC= 3A
- Complement to Type BDX62/A/B/C
APPLICATIONS
- Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX63 80 BDX63A 100 BDX63B 120 VCBO Collector-Base Voltage BDX63C 140 V BDX63 60 BDX63A 80 BDX63B 100 VCEO Collector-Emitter Voltage BDX63C 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB B Base Current-Continuous 0.15 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.94 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX63/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX63 60 BDX63A 80 BDX63B 100 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX63C IC= 100mA ;IB=0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA B 2 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V VECF C-E Diode Forward Voltage IF= 3A 1.2 V ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 0.2 mA ICBO Collector Cutoff Current VCB= VCEOmax;IE= 0 VCB= 1/2VCBOmax;IE= 0;TJ= 200℃ 0.2 2 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 3V 2500 hFE-2 DC Current Gain IC= 3A ; VCE= 3V 1000 hFE-3 DC Current Gain IC= 8A ; VCE= 3V 2600 COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1MHz 100 pF Switching times ton Turn-on Time 0.5 μs toff Turn-off Time IC= 3A; IB1= -IB2= 12mA 5 μs isc Website：www.iscsemi.cn 2