BDX54F STMICROELECTRONICS | Alldatasheet
Document overview
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Technical content
■ STMicroelectronics PREFERRED SALESTYPE ■ MONOLITHIC DARLINGTON CONFIGURATION ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
DESCRIPTION
The BDX54F is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. INTERNAL SCHEMATIC DIAGRAM January 2000 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) 160 V V CEO Collector-Emitter Voltage (IB = 0) 160 V V EBO Emitter-base Voltage (IC = 0) 5 V IC Collector Current 8 A ICM Collector Peak Current 12 A IB Base Current 0.2 A P tot Total Dissipation at Tc ≤ 25 oC 60 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC TO-220 R 1 Typ. = 10 KΩ R2 Typ. = 150 Ω
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 2.08 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEO Collector Cut-off Current (IE = 0) V CE = 80 V 0.5 mA ICBO Collector Cut-off Current (IB = 0) V CB = 160 V 0.2 mA IEBO Emitter Cut-off Current (IC = 0) V EB = 5 V 5 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 50 mA 160 V V CE(sat)∗ Collector-emitter Saturation Voltage IC = 2 A IB =10 mA 2 V V BE(sat)∗ Base-emitter Saturation Voltage IC = 2 A IB =10 mA 2.5 V hFE ∗ DC Current Gain I C = 2 A VCE = 5 V IC = 3 A VCE = 5 V 500 150 V F∗ Parallel Diode Forward Voltage IF = 2 A 2.5 V hfe∗ Small Signal Current Gain IC = 0.5 A f = 1MHz VCE = 2 V 20 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. BDX54F
DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 P011C TO-220 MECHANICAL DATA BDX54F
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com BDX54F