BDX54F ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX54F
DESCRIPTION
- Collector Current -IC= -8A
- High DC Current Gain- : hFE= 500(Min)@ IC= -2A
- Complement to Type BDX53F
APPLICATIONS
- Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB B Base Current-Continuous -0.2 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX54F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 B -160 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -10mA B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -10mA B -2.5 V VECF C-E Diode Forward Voltage IF= -2A -2.5 V ICEO Collector Cutoff Current VCE= -80V; IB= 0 B -0.5 mA ICBO Collector Cutoff Current VCB= -160V; IE= 0 -0.2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE-1 DC Current Gain IC= -2A ; VCE= -5V 500 hFE-2 DC Current Gain IC= -3A ; VCE= -5V 150 isc Website：www.iscsemi.cn 2