BDX54A

BDX53 ETC | Alldatasheet

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EPITAXIAL-BASE NPN/PNP uso BOG36 SDB POWER DARLINGTONS The BDX 53, BDX 53A, BDX 53B and BDX 53C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package, intended for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP types are the BDX 54, BDX 54A, BDX 54B and BDX 54C respectively. ABSOLUTE MAXIMUM RATINGS NPN | BDX53/BDX53A | BDX53B| BDX63C PNP*) BDX54|BDX54A | BDX54B| BDX54C Veso Collector-base voltage (Iz = 0) 4sv | eov | sov | 100v Veeo Collector-emitter voltage (Ip = 0) asv | cov | sov | 100v Veso Emitter-base voltage (Ic = 0) 5V i Io Collector current 8A lem Collector peak current (repetitive) 124 Ip Base current 5 0.24 Prot Total power dissipation at Teas, <25 C 6ow Tstg Storage temperature -65 to 150°C T Junction temperature 150°C * For PNP types voltage and current values are negative INTERNAL SCHEMATIC DIAGRAMS 5 5 eee Glet a olen | | | | 7 | $4 | | ! | | NPN | | PNP | | MECHANICAL DATA Dimensions in mm Collector connected to tab. : : LT I came ode 155 10/84

a | a THERMAL DATA ' 5 ! Safe operating area o-n62914 R, Thermal resistance junction-case max 2.08 °C/W Ic Rinjame Thermal resistance junction-ambient max 70 °C/W a) (Tt SE : ee ao PT RENT st [DC OPERATIONSHHESS TTT a PTT Nes | i ‘FOR SINGLE NON 1 \\ REPETITIVE PULSE} \\ N ELECTRICAL CHARACTERISTICS (T.... = 25°C unless otherwise specified) ; i ee eee ee ee EA Test conditions | Min. Typ, Max.{ Unt | ee oN [I poxs3/54_ —H = loo Collector cutoff for BDX53/54_— Vcg= 45V 200 | pA DOT oessasoct NIE 1 current (I; = 0) for BDX53A/54A Vcg = 60V 200 | uA i HN for BDX53B/54B Vcg = 80V 200 | yA jsoxs3.ers« eT | for BDX53C/54C Vc, = 100V 200 | nA 0 [BOxs3 CISC“ TTY loco Collector cutoff for BDX53/54_— Voge = 22V 500 | nA ' 0 10? Veg(v) current (Ig = 0) for BDX53A/54A Voce = 30V 500 | pA for BDX53B/54B Vcc = 40V 500 | pA For the other characteristics curves see TIP120/TIP125 series. for BDX3C/54C Vor = 50V 500 | pA \\ lego Emitter cutoff Veg = 5V current (I, = 0) Voeo(eus)” Collector-emitter Io = 100 mA i ‘sustaining voltage for BDX53/54 = |45 Vv nl (lp = 0) for BDX53A/54A |60 v for BDX53B/54B |80 v for BDX53C/54C |100 v Voce ean’ Collector-emitter Ig = 3A lg = 12mA v saturation voltage Vpe (sa Base-emitter lo = 3A lg = 12mA v i saturation voltage i hy eeurentgan f= 3A Vanav [of — | Ve Parallel-diode Ip = 3A 18 25 | Vv i forward voltage I; = 8A 25 v i * Pulsed: pulse duration = 300 ys, duty cycle = 1.5% \\ For PNP types voltage and current values are negative | ea 156 ! 157

(2 Meret EPITAXIAL-BASE NPN/PNP a a a THERMAL DATA POWER DARLINGTONS : 3 f Rin pease Thermal resistance junction-case max 1.92 °C/W The TIP120, TIP121 and TIP122 are silicon epitaxial-base NPN transistors in monolithic Rinjamp Thermal resistance junction-ambient max 62.5 °C/W Darlington configuration in Jedec TO-220 plastic package, intended for use in power linear and switching applications. The complementary PNP types are the TIP125, TIP126 and TIP127 respectively. t ABSOLUTE MAXIMUM RATINGS — NPN | TIP120 | TiP121 | TIP122 pnp* | TIP125 | TIP126 | TIP127 Vego Collector-base voltage (Ie = 0) 60v sov 100V one oath eee Collector-emitter voltage (lp = 0) 60v Bov 100V ELECTRICAL CHARACTERISTICS (Taco = 25°C unless otherwise specified) Veso Emitter-base voltage (Ic = 0) 8V | lo Collector current BA : eS rm x ee 1g Base current O1A Prot Total power dissipationa at Tease S 25°C 65W Ice Collector cutoff | for TIP120/5 Vce =30V mA Tamp< 25°C aw : current (Ig =0) | for TIP121/6 Voce =40V mA Tag Storage temperature -65 to 150°C for TIP122/7 Vg = 50V mA T, Junction temperature 150°C * For PNP types voltage and current values are negative. ‘cso Collector cutoff for mipi20/6 Mi = oN 03 mA INTERNAL SCHEMATIC DIAGRAMS current a= 0) | eC TIPIZ2I7 Von = 100V 02 | ma . 5 a ca) pi NPN | | pnp i | ‘ leso Emitter cutoff | Veg = 5V mA 1 t | current (Ic = 0) | | | | | ; | Veco au” Collector-emitter | 1¢ = 30mA LTE Ie yee OO | ae see, ; Sustaining voltage | for TIP120/5 60 v some RZ TYP. 150% sacs RR TYP. 15 (lg = 0) for TIP121/6 80 Vv MECHANICAL DATA Dimensions in mm for TIP122/7 100 v wee ee ‘ 2 Oe Vee gary Collector-emitter | Ie = 3A lg =12mA v Sel oe meee ee saturation voltage | 1e=5A Ig = 20mA v — eo EER : : Vee con" Base-emitter 1c=38A Vee =3V v : Pi ard 7 —S es mm voltage : = : Teh : hre* DC current gain | lc=0.5A Vce=3V_ | 1000 : 2 iz eae : ‘ 1¢=3A Vee =3V__| 1000 ee pe NW aett ; : * Pulsed: pulse duration = 300us, duty cycle < 2% : 10/84 668 : 669

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