BDX53F TGS | Alldatasheet
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Technical content
Parameter Symbol Value Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 5 V Collector Current IC 8.0 A Base Current IB 0.2 A Total Dissipation at Ptot 60 W Max. Operating Junction Temperature Tj 150 o C Storage Temperature Tstg -55~150 o C BDX53F / BDX54F
DESCRIPTION
Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB=160V, IE=0 — — 0.2 mA Collector Cut-off Current ICEO VCE=80V, IB=0 — — 0.5 mA Emitter Cut-off Current IEBO VEB=5.0V, IC=0 — — 2.0 mA Collector-Emitter Sustaining Voltage VCEO IC=50mA, IB=0 160 — — V DC Current Gain hFE VCE=5V, IC=2.0A 500 — — Collector-Emitter Saturation Voltage VCE(sat) IC=2.0A,IB=10mA — — 2.0 V Base-Emitter Saturation Voltage VBE(sat) IC=2.0A,IB=10mA — — 2.5 V Parallel-diode Forward Voltage VF IF=2A — — 2.5 V Complementary Silicon Power Darlington Ttransistors Product specification The BDX53F are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP types are BDX54F respectively.
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS( Ta = 25 C) O ( Ta = 25 C) O TO-220 TIGER ELECTRONIC CO.,LTD