BDX53F STMICROELECTRONICS | Alldatasheet

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Technical content

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ MONOLITHIC DARLINGTON CONFIGURATION ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

APPLICATIONS

■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

DESCRIPTION

The BDX53F is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDX54F. INTERNAL SCHEMATIC DIAGRAM October 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDX53F PNP BDX54F V CBO Collector-Base Voltage (IE = 0) 160 V V CEO Collector-Emitter Voltage (IB = 0) 160 V V EBO Emitter-base Voltage (IC = 0) 5 V IC Collector Current 8 A ICM Collector Peak Current 12 A IB Base Current 0.2 A P tot Total Dissipation at Tc ≤ 25 oC 60 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC For PNP types voltage and current values are negative. TO-220 R 1 Typ. = 10 KΩ R2 Typ. = 150 Ω

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 2.08 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEO Collector Cut-off Current (IE = 0) V CE = 80 V 0.5 mA ICBO Collector Cut-off Current (IB = 0) V CB = 160 V 0.2 mA IEBO Emitter Cut-off Current (IC = 0) V EB = 5 V 5m A V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 50 mA 160 V V CE(sat)∗ Collector-emitter Saturation Voltage IC = 2 A IB =10 mA 2 V V BE(sat)∗ Base-emitter Saturation Voltage IC = 2 A IB =10 mA 2.5 V hFE ∗ DC Current Gain I C = 2 A VCE = 5 V IC = 3 A VCE = 5 V 500 150 V F∗ Parallel Diode Forward Voltage IF = 2 A 2.5 V hfe∗ Small Signal Current Gain IC = 0.5 A f = 1MHz VCE = 2 V 20 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. BDX53F / BDX54F

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 0.409 L2 16.40 0.645 L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 M 2.60 0.102 P011CI TO-220 MECHANICAL DATA BDX53F / BDX54F

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com BDX53F / BDX54F