BDX53F ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX53F
DESCRIPTION
- Collector Current -IC= 8A
- High DC Current Gain- : hFE= 500(Min)@ IC= 2A
- Complement to Type BDX54F
APPLICATIONS
- Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB B Base Current-Continuous 0.2 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX53F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 B 160 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 10mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 10mA B 2.5 V VECF C-E Diode Forward Voltage IF= 2A 2.5 V ICEO Collector Cutoff Current VCE= 80V; IB= 0 B 0.5 mA ICBO Collector Cutoff Current VCB= 160V; IE= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE-1 DC Current Gain IC= 2A ; VCE= 5V 500 hFE-2 DC Current Gain IC= 3A ; VCE= 5V 150 isc Website：www.iscsemi.cn 2