BDX53 POINN | Alldatasheet

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BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS PRODUCT INFORMATION MAY 1989 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

  • Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54 C
  • 60 W at 25°C Case Temperature
  • 8 A Continuous Collector Current
  • Minimum hFE of 750 at 3 V, 3 A B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. RATIN G SYMBO L VALU E UNIT Collector-base voltage (IE = 0) BDX53 BDX53A BDX53B BDX53 C V CB O 100 V Collector-emitter voltage (I B = 0) BDX53 BDX53A BDX53B BDX53 C V CE O 100 V Emitter-base voltage V EB O 5 V Continuous collector current IC 8 A Continuous base current IB 0.2 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 60 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Operating junction temperature range Tj -65 to +150 °C Operating temperature range Tstg -65 to +150 °C Operating free-air temperature range TA -65 to +150 °C

BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS MAY 1989 - REVISED MARCH 199 7 PRODUCT INFORMATION NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETE R TEST CONDITION S MIN TY P MA X UNIT V (BR)CE O Collector-emitter breakdown voltage IC = 100 mA IB = 0 (see Note 3) BDX53 BDX53A BDX53B BDX53 C 100 V I CE O Collector-emitter cut-off current V C E = 30 V V C E = 30 V V C E = 40 V V C E = 50 V IB = 0 IB = 0 IB = 0 IB = 0 BDX53 BDX53A BDX53B BDX53 C 0.5 0.5 0.5 0.5 m A I CB O Collector cut-off current V C B = 45 V V C B = 60 V V C B = 80 V V C B = 100 V IE = 0 IE = 0 IE = 0 IE = 0 BDX53 BDX53A BDX53B BDX53 C 0.2 0.2 0.2 0.2 m A I EB O Emitter cut-off current V EB = 5 V IC = 0 2 m A hFE Forward current transfer ratio V C E = 3 V IC = 3 A (see Notes 3 and 4) 750 V BE(sat) Base-emitter saturation voltage IB = 12 mA IC = 3 A (see Notes 3 and 4) 2.5 V VCE(sat) Collector-emitter saturation voltage IB = 12 mA IC = 3 A (see Notes 3 and 4) 2 V VEC Parallel diode forward voltage IE = 3 A IB = 0 2.5 V thermal characteristics PARAMETE R MIN TY P MA X UNIT R θJC Junction to case thermal resistance 2.08 °C/W R θJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETE R TEST CONDITIONS † MIN TY P MA X UNIT ton Turn-on time IC = 3 A V BE(off) = -4.5 V IB(on) = 12 mA R L = 10 Ω IB(off) = -12 mA tp = 20 µs, dc ≤ 2% 1 µs toff Turn-off time 5 µs

BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS MAY 1989 - REVISED MARCH 199 7 PRODUCT INFORMATION MAXIMUM SAFE OPERATING REGION S Figure 4. THERMAL INFORMATIO N Figure 5. MAXIMUM FORWARD-BIAS SAFE OPERATING AREA V CE - Collector-Emitter Voltage - V 1·0 10 100 1000 IC - Collector Current - A 0·1 1·0

100 SAS120AD

t p = 300 µs, d = 0.1 = 10% BDX53 BDX53A BDX53B BDX53C MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE T C - Case Temperature - °C 0 25 50 75 100 125 150 P tot - Maximum Power Dissipation - W TIS120AB

MAY 1989 - REVISED MARCH 1997 BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS PRODUCT INFORMATION TO-220 3-pin plastic flange-mount packag e This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. MECHANICAL DAT A TO220 ALL LINEAR DIMENSIONS IN MILLIMETERS ø 1,23 1,32 4,20 4,70 1 2 3 0,97 0,61 see Note C see Note B 10,0 10,4 2,54 2,95 6,0 6,6 14,55 15,90 12,7 14,1 3,5 6,1 1,07 1,70 2,34 2,74 4,88 5,28 3,71 3,96 0,41 0,64 2,40 2,90 VERSION 2 VERSION 1 NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE

BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS MAY 1989 - REVISED MARCH 199 7 PRODUCT INFORMATION IMPORTANT NOTIC E Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS . Copyright © 1997, Power Innovations Limited