BDX53BFP STMICROELECTRONICS | Alldatasheet

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SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS: ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING

DESCRIPTION

The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in T0-220FP fully molded isolated package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. INTERNAL SCHEMATIC DIAGRAM February 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) 80 V V CEO Collector-Emitter Voltage (IB = 0) 80 V V EBO Emitter-base Voltage (IC = 0) 5 V IC Collector Current 8 A ICM Collector Peak Current (repetitive) 12 A IB Base Current 0.2 A P tot Total Dissipation at Tc ≤ 25 oC 29 W Visol Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink 1500 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC T0-220FP R 1 Typ. = 10 KΩ R2 Typ. = 150 Ω

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 4.3 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) V CB = 80 V 0.2 mA ICEO Collector Cut-off Current (IB = 0) V CE = 40 V 0.5 mA IEBO Emitter Cut-off Current (IC = 0) V EB = 5 V 2m A V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA 80 V V CE(sat)∗ Collector-emitter Saturation Voltage IC = 3 A IB =12 mA 2 V V BE(sat)∗ Base-emitter Saturation Voltage IC = 3 A IB =12 mA 2.5 V hFE ∗ DC Current Gain I C = 3 A VCE = 3 V 750 V F∗ Parallel Diode Forward Voltage IF = 3 A IF = 8 A 1.8 2.5 2.5 V V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area BDX53BFP

DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G ¯ F 123F2 TO-220FP MECHANICAL DATA BDX53BFP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com BDX53BFP