BDX45

BDX45 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04

1997 Jul 02

BDX45; BDX47 PNP Darlington transistors book, halfpage M3D100

1997 Jul 02 2

Philips Semiconductors Product specification PNP Darlington transistors BDX45; BDX47

FEATURES

• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.

APPLICATIONS

• Industrial switching applications such as: – print hammers – solenoids – relay and lamp drivers.

DESCRIPTION

PNP Darlington transistor in a TO-126; SOT32 plastic package. NPN complements: BDX42 and BDX44. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base Fig.1 Simplified outline (TO-126; SOT32) and symbol. handbook, halfpage

123 Top view MAM350

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter BDX45 −−− 60 V BDX47 −−− 90 V VCES collector-emitter voltage VBE =0 BDX45 −−− 45 V BDX47 −−− 80 V IC collector current (DC) −−− 1A Ptot total power dissipation Tamb ≤ 25 °C −− 1.25 W Tmb ≤ 100 °C −− 5W hFE DC current gain I C = −150 mA; VCE = −10 V 1000 −− IC = −500 mA; VCE = −10 V 2000 −− fT transition frequency I C = −500 mA; VCE = −5 V; f = 100 MHz− 200 − MHz

1997 Jul 02 3

Philips Semiconductors Product specification PNP Darlington transistors BDX45; BDX47 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BDX45 −− 60 V BDX47 −− 90 V VCES collector-emitter voltage V BE =0 BDX45 −− 45 V BDX47 −− 80 V VEBO emitter-base voltage open collector −− 5V IC collector current (DC) −− 1A ICM peak collector current −− 2A IB base current (DC) −− 100 mA Ptot total power dissipation T amb ≤ 25 °C − 1.25 W Tmb ≤ 100 °C − 5W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air 100 K/W R th j-mb thermal resistance from junction to mounting base 10 K/W

1997 Jul 02 4

Philips Semiconductors Product specification PNP Darlington transistors BDX45; BDX47 CHARACTERISTICS Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current BDX45 I E = 0; VCB = −60 V −−− 100 nA BDX47 I E = 0; VCB = −90 V −−− 100 nA ICES collector cut-off current BDX45 V BE = 0; VCE = −45 V −−− 50 nA BDX47 V BE = 0; VCE = −80 V −−− 50 nA IEBO emitter cut-off current I C = 0; VEB = −4V −−− 50 nA hFE DC current gain V CE = −10 V; see Fig. 2 IC = −150 mA 1000 −− IC = −500 mA 2000 −− VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −0.5 mA −−− 1.3 V IC = −500 mA; IB = −0.5 mA; Tj= 150°C −−− 1.3 V IC = −1 A; IB = −4m A −−− 1.6 V IC = −1 A; IB = −4 mA; Tj= 150°C −−− 1.6 V VBEsat base-emitter saturation voltage IC = −500 mA; IB = −0.5 mA −−− 1.9 V IC = −1 A; IB = −4m A −−− 2.2 V fT transition frequency I C = −500 mA; VCE = −5 V; f = 100 MHz− 200 − MHz Switching times (between 10% and 90% levels);see Fig.3 ton turn-on time I Con = −500 mA; IBon = −0.5 mA; IBoff= 0.5 mA −− 500 ns td delay time −− 200 ns tr rise time −− 300 ns toff turn-off time −− 700 ns ts storage time −− 550 ns tf fall time −− 150 ns

1997 Jul 02 5

Philips Semiconductors Product specification PNP Darlington transistors BDX45; BDX47 Fig.2 DC current gain; typical values. VCE = −10 V. handbook, full pagewidth 6000 2000 1000 3000 4000 5000 MGD839 hFE IC (mA) Fig.3 Test circuit for switching times. Vi= −10 V; T = 200µs; tp =6 µs; tr =tf≤ 3 ns. R1 = 56Ω ; R2 = 10 kΩ ; RB =1 0kΩ ; RC =1 8Ω . VBB = 1.8 V; VCC = −10.7 V. Oscilloscope input impedance Zi=5 0Ω . andbook, full pagewidth R C DUT MGD624 Vo R B (probe) 450 Ω (probe) 450 Ωoscilloscope oscilloscope VBB Vi VCC

1997 Jul 02 6

Philips Semiconductors Product specification PNP Darlington transistors BDX45; BDX47 PACKAGE OUTLINE UNIT b p cD E e1 LQ w REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.88 0.65 2.7 2.3 0.60 0.45 11.1 10.5 7.8 7.2 2.29 e 4.58 0.254 P 3.2 3.0 3.9 3.6 DIMENSIONS (mm are the original dimensions) Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. 16.5 15.3 1.5 0.9 L1(1) max 2.54 SOT32 TO-126 97-03-04 0 2.5 5 mm scale A Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32 D P E A L Q cbp 123 w M e

1997 Jul 02 7

Philips Semiconductors Product specification PNP Darlington transistors BDX45; BDX47 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

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