BDX34 BOURNS | Alldatasheet

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BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS /g80 /g82/g79 /g68 /g85/g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 1AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

  • Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D
  • 70 W at 25°C Case Temperature
  • 10 A Continuous Collector Current
  • Minimum hFE of 750 at 3 V, 3 A absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) BDX34 BDX34A BDX34B BDX34C BDX34D V CBO -45 -60 -80 -100 -120 V Collector-emitter voltage (I B = 0) BDX34 BDX34A BDX34B BDX34C BDX34D V CEO -45 -60 -80 -100 -120 V Emitter-base voltage V EBO -5 V Continuous collector current IC -10 A Continuous base current IB -0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P tot 70 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P tot 2W Operating free air temperature range T J -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Operating free-air temperature range T A -65 to +150 °C B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA

BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS /g80/g82/g79/g68/g85 /g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 3. These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = -100 mA I B = 0 (see Note 3) BDX34 BDX34A BDX34B BDX34C BDX34D -45 -60 -80 -100 -120 V I CEO Collector-emitter cut-off current VCE = - 3 0 V VCE = - 3 0 V VCE = -40 V VCE = -50 V VCE = -60 V VCE = - 3 0 V VCE = - 3 0 V VCE = -40 V VCE = -50 V VCE = -60 V IB =0 IB =0 IB =0 IB =0 IB =0 IB =0 IB =0 IB =0 IB =0 IB =0 TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C BDX34 BDX34A BDX34B BDX34C BDX34D BDX34 BDX34A BDX34B BDX34C BDX34D -0.5 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 mA I CBO Collector cut-off current VCB = - 4 5 V VCB = - 6 0 V VCB = -80 V VCB = -100 V VCB = -120 V VCB = - 4 5 V VCB = - 6 0 V VCB = -80 V VCB = -100 V VCB = -120 V IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C BDX34 BDX34A BDX34B BDX34C BDX34D BDX34 BDX34A BDX34B BDX34C BDX34D mA I EBO Emitter cut-off current VEB = -5 V I C =0 - 1 0 m A hFE Forward current transfer ratio VCE = -3 V VCE = -3 V VCE = -3 V VCE = -3 V VCE = -3 V IC =- 4 A IC =- 4 A IC =- 3 A IC =- 3 A IC =- 3 A (see Notes 3 and 4) BDX34 BDX34A BDX34B BDX34C BDX34D 750 750 750 750 750 V BE(on) Base-emitter voltage VCE = -3 V VCE = -3 V VCE = -3 V VCE = -3 V VCE = -3 V IC =- 4 A IC =- 4 A IC =- 3 A IC =- 3 A IC =- 3 A (see Notes 3 and 4) BDX34 BDX34A BDX34B BDX34C BDX34D -2.5 -2.5 -2.5 -2.5 -2.5 V V CE(sat) Collector-emitter saturation voltage IB = -8 mA IB = -8 mA IB = -6 mA IB = -6 mA IB = -6 mA IC =- 4 A IC =- 4 A IC =- 3 A IC =- 3 A IC =- 3 A (see Notes 3 and 4) BDX34 BDX34A BDX34B BDX34C BDX34D -2.5 -2.5 -2.5 -2.5 -2.5 V V EC Parallel diode forward voltage IE = -8 A I B = 0 -4 V

BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS /g80 /g82/g79 /g68 /g85/g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. † Voltage and current values s hown are nominal; exact values vary slightly with transistor parameters. thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.78 °C/W RθJA Junction to free air thermal resist ance 62.5 °C/W resistive-load-switching characteristics at 25°C case tem perature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Tu r n-o n tim e I C = -3 A VBE(off) = 3.5 V IB(on) = -12 mA RL = 10 Ω IB(off) = 12 mA tp = 20 µs, dc ≤ 2% 1µ s toff Turn-off time 5µ s

BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS /g80 /g82/g79 /g68 /g85/g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. THERMAL INFORMATION Figure 4. MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TC - Case Temperature - °C 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Ptot - Maximum Power Dissipation - W TIS130AB

BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS /g80/g82/g79/g68/g85 /g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. MECHANICAL DATA TO220 ALL LINEAR DIMENSIONS IN MILLIMETERS ø 1,23 1,32 4,20 4,70 123 0,97 0,61 see Note C see Note B 10,0 10,4 2,54 2,95 6,0 6,6 14,55 15,90 12,7 14,1 3,5 6,1 1,07 1,70 2,34 2,74 4,88 5,28 3,71 3,96 0,41 0,64 2,40 2,90 VERSION 2 VERSION 1 NOTES: A. The centre pin is in electr ical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE