BDX33-S BOURNS | Alldatasheet

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BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS /g80 /g82/g79 /g68 /g85/g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 1AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

  • Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D
  • 70 W at 25°C Case Temperature
  • 10 A Continuous Collector Current
  • Minimum hFE of 750 at 3 V, 3 A absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) BDX33 BDX33A BDX33B BDX33C BDX33D V CBO 100 120 V Collector-emitter voltage (I B = 0) BDX33 BDX33A BDX33B BDX33C BDX33D V CEO 100 120 V Emitter-base voltage V EBO 5V Continuous collector current IC 10 A Continuous base current IB 0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P tot 70 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P tot 2W Operating free air temperature range T J -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Operating free-air temperature range T A -65 to +150 °C B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA

BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS /g80/g82/g79/g68/g85 /g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 3. These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 100 mA I B = 0 (see Note 3) BDX33 BDX33A BDX33B BDX33C BDX33D 100 120 V I CEO Collector-emitter cut-off current VCE = 3 0 V VCE = 3 0 V VCE = 40 V VCE = 50 V VCE = 60 V VCE = 3 0 V VCE = 3 0 V VCE = 40 V VCE = 50 V VCE = 60 V IB =0 IB =0 IB =0 IB =0 IB =0 IB =0 IB =0 IB =0 IB =0 IB =0 TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C BDX33 BDX33A BDX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D 0.5 0.5 0.5 0.5 0.5 mA I CBO Collector cut-off current VCB = 4 5 V VCB = 6 0 V VCB = 80 V VCB = 100 V VCB = 120 V VCB = 4 5 V VCB = 6 0 V VCB = 80 V VCB = 100 V VCB = 120 V IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C BDX33 BDX33A BDX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D mA I EBO Emitter cut-off current VEB = 5 V I C =0 1 0 m A hFE Forward current transfer ratio VCE = 3 V VCE = 3 V VCE = 3 V VCE = 3 V VCE = 3 V IC =4 A IC =4 A IC =3 A IC =3 A IC =3 A (see Notes 3 and 4) BDX33 BDX33A BDX33B BDX33C BDX33D 750 750 750 750 750 V BE(on) Base-emitter voltage VCE = 3 V VCE = 3 V VCE = 3 V VCE = 3 V VCE = 3 V IC =4 A IC =4 A IC =3 A IC =3 A IC =3 A (see Notes 3 and 4) BDX33 BDX33A BDX33B BDX33C BDX33D 2.5 2.5 2.5 2.5 2.5 V V CE(sat) Collector-emitter saturation voltage IB = 8 mA IB = 8 mA IB = 6 mA IB = 6 mA IB = 6 mA IC = 4 A IC = 4 A IC = 3 A IC = 3 A IC = 3 A (see Notes 3 and 4) BDX33 BDX33A BDX33B BDX33C BDX33D 2.5 2.5 2.5 2.5 2.5 V V EC Parallel diode forward voltage IE = 8 A I B = 0 4 V

BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS /g80 /g82/g79 /g68 /g85/g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. † Voltage and current values s hown are nominal; exact values vary slightly with transistor parameters. thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.78 °C/W RθJA Junction to free air thermal resist ance 62.5 °C/W resistive-load-switching characteristics at 25°C case tem perature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Tu r n-o n tim e I C = 3 A VBE(off) = -3.5 V IB(on) = 12 mA RL = 10 Ω IB(off) = -12 mA tp = 20 µs, dc ≤ 2% 1µ s toff Turn-off time 5µ s

BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS /g80 /g82/g79 /g68 /g85/g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. THERMAL INFORMATION Figure 4. MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TC - Case Temperature - °C 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Ptot - Maximum Power Dissipation - W TIS130AB