BDX33B STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION

The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. INTERNAL SCHEMATIC DIAGRAM October 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Unit NPN BDX33B BDX33C PNP BDX34B BDX34C V CBO Collector-Base Voltage (IE = 0) 80 100 V V CEO Collector-Emitter Voltage (IB = 0) 80 100 V IC Collector Current 10 A ICM Collector Peak Current 15 A IB Base Current 0.25 A P tot Total Dissipation at Tc ≤ 25 oC 70 W Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C For PNP types voltage and current values are negative. TO-220 R 1 Typ. = 10 KΩ R 2 Typ. = 150Ω

R thj-case Thermal Resistance Junction-case 1.78 oC/W ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE =0 ) forBDX33B/34B V CB =8 0V forBDX33C/34C VCB = 100V Tcase = 100 oC forBDX33B/34B VCB =8 0V forBDX33C/34C V CB =1 0 0V 0.2 0.2 mA mA mA mA ICEO Collector Cut-off Current (IB =0 ) forBDX33B/34B V CE =4 0V forBDX33C/34C V CE = 50V Tcase = 100 oC forBDX33B/34B V CE =4 0V forBDX33C/34C V CE =5 0V 0.5 0.5 mA mA mA mA IEBO Emitter Cut-off Current (IC =0 ) V EB =5V 5 m A V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB =0 ) IC =100 mA for BDX33B/34B forBDX33C/34C 100 V V VCER(sus) ∗ Collector-emitter Sustaining Voltage (RBE =100 Ω ) IC = 100 mA for BDX33B/34B for BDX33C/34C 100 V V V CEV(su s)∗ Collector-emitter Sustaining Voltage (VBE =-1.5 V) IC = 100 mA for BDX33B/34B for BDX33C/34C 100 V V V CE(sat)∗ Collector-emitter Saturation Voltage IC =3A I B =6m A 2 . 5 V V BE ∗ Base-emitter Voltage I C =3A V CE =3V 2 . 5 V hFE ∗ DC Current Gain I C =3A V CE = 3 V 750 V V F ∗ Parallel-Diode Forward Voltage IF =8A 4 V hfe S m a l lS i g n a lC u r r e n tG a i n IC =1A V CE =5V f=1 M H z 1 0 0 ∗ Pulsed: Pulse duration = 300µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area BDX33B BDX33C BDX34B BDX34C

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 P011C TO-220 MECHANICAL DATA BDX33B BDX33C BDX34B BDX34C

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com BDX33B BDX33C BDX34B BDX34C