BDX14A TTELEC | Alldatasheet
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Silicon Bipolar Transistor BDX14A Hermetic TO-66 Metal Package Ideal For General Purpose Low Frequency Switching Applications High Reliability Screening Options Available Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number: Issue: Page: DOC 10233 1 of 3 Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector - Base Voltage -90V VCEO Collector - Emitter Voltage -55V VCER Collector - Emitter Voltage RBE = 100Ω -60V VCEX Collector - Base Voltage VBE = +1.5V -90V VEBO Emitter - Base Voltage -7V IC Continuous Collector Current -4A IB Base Current -2A PD Total Power Dissipation TC = 25°C 21.87W Derate Above 25°C 0.125W/°C TJ Junction Temperature Range -55 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters Max. Units RθJC Thermal Resistance, Junction To Case 8 °C/W
Silicon Bipolar Transistor BDX14A Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number: Issue: Page: DOC 10233 2 of 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ. Max. Units ICEX Collector-Emitter Cut Off Current VCE = -90V VBE = +1.5V -1.0 mA VCE = -90V VBE = +1.5V -5 Tcase = 150°C V(BR)CEO(1) Collector Emitter Breakdown Voltage IC = -10mA IB = 0 -55 V V(BR)CER Collector-Emitter Breakdown Voltage IC = -10mA RBE = 100Ω -60 V(BR)EBO Emitter-Base Breakdown Voltage IE = -1.0mA IC = 0 -7 VCE(sat) (1) Collector-Emitter Saturation Voltage IC = -0.5A IB = -50mA -1.0 VBE (1) Base-Emitter Voltage VCE = -4V IC = -0.5A -1.7 hFE (1) Static Forward Current Transfer Ratio VCE = -4V IC = -0.5A 25 250 - DYNAMIC CHARACTERISTICS fT Transition Frequency VCE = -10V IC = -0.2A
4 MHz
f = 1.0MHz Notes (1) Pulse Width ≤ 380us, δ ≤ 2%
Silicon Bipolar Transistor BDX14A Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number: Issue: Page: DOC 10233 3 of 3 MECHANICAL DATA Dimensions in mm (inches) TO-66 (TO-213AA) METAL PACKAGE Underside View Pin 1 - Base Pin 2 - Emitter Case - Collector