BDW42_05 ONSEMI | Alldatasheet

Document overview

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  • PDF pages: 7

Technical content

Features

  • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc.
  • Collector Emitter Sustaining V oltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min) − BDW46

100 Vdc (min) − BDW42/BDW47

  • Low Collector Emitter Saturation V oltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc
  • Monolithic Construction with Built−In Base Emitter Shunt resistors
  • TO−220AB Compact Package
  • Pb−Free Packages Are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BDW46 BDW42, BDW47 VCEO 100 Vdc Collector-Base Voltage BDW46 BDW42, BDW47 VCB 100 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 15 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 0.68 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R/C0113JC 1.47 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO−220AB CASE 221A−09 STYLE 1 MARKING DIAGRAM

15 AMP DARLINGTON

80−100 VOLT, 85 WATT http://onsemi.com 2 3 Device Package Shipping

ORDERING INFORMATION

BDW42 TO−220AB 50 Units/Rail BDW46 TO−220AB 50 Units/Rail BDW47G 50 Units/Rail BDW47 TO−220AB (Pb−Free)

50 Units/RailTO−220AB

Preferred devices are ON Semiconductor recommended choices for future use and best overall value BDWxx = Device Code x = 42, 46, or 47 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package BDW42G TO−220AB (Pb−Free)

50 Units/Rail

BDW46G TO−220AB (Pb−Free)

BDW42 − NPN, BDW46, BDW47 − PNP http://onsemi.com ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25/C0095C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic ÎÎÎÎÎ ÎÎÎÎÎ Symbol ÎÎÎ ÎÎÎ Min ÎÎÎÎ ÎÎÎÎ Max ÎÎÎ ÎÎÎ Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) BDW46 BDW42/BDW47 ÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎ VCEO(sus) ÎÎÎ Î Î Î ÎÎÎ 100 ÎÎÎÎ Î ÎÎ Î ÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCE = 40 Vdc, IB = 0) BDW46 (VCE = 50 Vdc, IB = 0) BDW42/BDW47 ÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎ ICEO ÎÎÎ Î Î Î ÎÎÎ ÎÎÎÎ Î ÎÎ Î ÎÎÎÎ 2.0 2.0 ÎÎÎ Î Î Î ÎÎÎ mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCB = 80 Vdc, IE = 0) BDW46 (VCB = 100 Vdc, IE = 0) BDW42/BDW47 ÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎ ICBO ÎÎÎ Î Î Î ÎÎÎ ÎÎÎÎ Î ÎÎ Î ÎÎÎÎ 1.0 1.0 ÎÎÎ Î Î Î ÎÎÎ mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎ IEBO ÎÎÎ Î Î Î ÎÎÎ ÎÎÎÎ Î ÎÎ Î ÎÎÎÎ 2.0 ÎÎÎ Î Î Î ÎÎÎ mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (Note 1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) ÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎ hFE ÎÎÎ Î Î Î ÎÎÎ 1000 250 ÎÎÎÎ Î ÎÎ Î ÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 10 mAdc) (IC = 10 Adc, IB = 50 mAdc) ÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎ VCE(sat) ÎÎÎ Î Î Î ÎÎÎ ÎÎÎÎ Î ÎÎ Î ÎÎÎÎ 2.0 3.0 ÎÎÎ Î Î Î ÎÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter On Voltage (IC = 10 Adc, VCE = 4.0 Vdc) ÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎ VBE(on) ÎÎÎ Î Î Î ÎÎÎ ÎÎÎÎ Î ÎÎ Î ÎÎÎÎ 3.0 ÎÎÎ Î Î Î ÎÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SECOND BREAKDOWN (Note 2) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Second Breakdown Collector Current with Base Forward Biased BDW42 V CE = 28.4 Vdc VCE = 40 Vdc BDW46/BDW47 V CE = 22.5 Vdc VCE = 36 Vdc ÎÎÎÎÎ Î ÎÎÎ Î Î ÎÎÎ Î Î ÎÎÎ Î ÎÎÎÎÎ IS/b ÎÎÎ Î Î Î Î Î Î Î Î Î ÎÎÎ 3.0 1.2 3.8 1.2 ÎÎÎÎ Î ÎÎ Î Î ÎÎ Î Î ÎÎ Î ÎÎÎÎ ÎÎÎ Î Î Î Î Î Î Î Î Î ÎÎÎ Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Magnitude of common emitter small signal short circuit current transfer ratio (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) ÎÎÎÎÎ ÎÎÎÎÎ fT ÎÎÎ ÎÎÎ 4.0 ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ MHz ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDW42 BDW46/BDW47 ÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎ Cob ÎÎÎ Î Î Î ÎÎÎ ÎÎÎÎ Î ÎÎ Î ÎÎÎÎ 200 300 ÎÎÎ Î Î Î ÎÎÎ pF ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small−Signal Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) ÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎ hfe ÎÎÎ Î Î Î ÎÎÎ 300 ÎÎÎÎ Î ÎÎ Î ÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎ 1. Pulse Test: Pulse Width = 300 /C0109s, Duty Cycle = 2.0%. 2. Pulse Test non repetitive: Pulse Width = 250 ms.

BDW42 − NPN, BDW46, BDW47 − PNP http://onsemi.com PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE−T− C ST U R J STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 BDW42/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.