BDW45 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDW45
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= -60V(Min)
- High DC Current Gain : h FE= 1000(Min) @IC= -5A
- Low Collector Saturation Voltage : V CE(sat)= -2.0V(Max.)@ IC= -5.0A = -3.0V(Max.)@ IC= -10A
- Complement to Type BDW40
APPLICATIONS
- Designed for general purpose and low speed switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB B Base Current-Continuous -0.5 A PC Collector Power Dissipation @ TC=25℃ 85 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.47 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDW45
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -10mA B -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -50mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -4V -3.0 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -1.0 mA ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -2.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2.0 mA hFE-1 DC Current Gain IC= -5A ; VCE= -4V 1000 hFE-2 DC Current Gain IC= -10A ; VCE= -4V 250 fT Current-Gain—Bandwidth Product IC= -3A; VCE= -3V; ftest= 1MHz 4 MHz COB Output Capacitance IE= 0; VCB= -10V; ftest= 0.1MHz 300 pF isc Website：www.iscsemi.cn 2