BDW43 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW43
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= 120V(Min)
- High DC Current Gain : h FE= 1000(Min) @IC= 5A
- Low Collector Saturation Voltage : V CE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A
- Complement to Type BDW48
APPLICATIONS
- Designed for general purpose and low speed switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB B Base Current-Continuous 0.5 A PC Collector Power Dissipation @ TC=25℃ 85 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.47 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW43
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA B 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 50mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 4V 3.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 60V; IB= 0 B 2.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 5A; VCE= 4V 1000 hFE-2 DC Current Gain IC= 10A; VCE= 4V 250 fT Current-Gain—Bandwidth Product IC= 3A; VCE= 3V; ftest= 1MHz 4 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz 200 pF isc Website：www.iscsemi.cn 2