BDV65 POINN | Alldatasheet

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BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS PRODUCT INFORMATION JUNE 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

  • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64 C
  • 125 W at 25°C Case Temperature
  • 12 A Continuous Collector Current
  • Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAA B C E absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10% 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. RATIN G SYMBO L VALU E UNIT Collector-base voltage (IE = 0) BDV65 BDV65A BDV65B BDV65 C V CB O 100 120 V Collector-emitter voltage (IB = 0) BDV65 BDV65A BDV65B BDV65 C V CE O 100 120 V Emitter-base voltage V EB O 5 V Continuous collector current IC 12 A Peak collector current (see Note 1) IC M 15 A Continuous base current IB 0.5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm from case for 10 seconds TL 260 °C

BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 199 7 PRODUCT INFORMATION NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETE R TEST CONDITION S MIN TY P MA X UNIT V (BR)CE O Collector-emitter breakdown voltage IC = 30 mA IB = 0 (see Note 4) BDV65 BDV65A BDV65B BDV65 C 100 120 V I CE O Collector-emitter cut-off current V C B = 30 V V C B = 40 V V C B = 50 V V C B = 60 V IB = 0 IB = 0 IB = 0 IB = 0 BDV65 BDV65A BDV65B BDV65 C m A I CB O Collector cut-off current V C B = 60 V V C B = 80 V V C B = 100 V V C B = 120 V V C B = 30 V V C B = 40 V V C B = 50 V V C B = 60 V IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65 C 0.4 0.4 0.4 0.4 m A I EB O Emitter cut-off current V EB = 5 V IC = 0 5 m A hFE Forward current transfer ratio V C E = 4 V IC = 5 A (see Notes 4 and 5) 1000 VCE(sat) Collector-emitter saturation voltage IB = 20 mA IC = 5 A (see Notes 4 and 5) 2 V VBE Base-emitter voltage V C E = 4 V IC = 5 A (see Notes 4 and 5) 2.5 V VEC Parallel diode forward voltage IE = 10 A IB = 0 (see Notes 4 and 5) 3.5 V thermal characteristics PARAMETE R MIN TY P MA X UNIT R θJC Junction to case thermal resistance 1 °C/W R θJA Junction to free air thermal resistance 35.7 °C/W

BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 199 7 PRODUCT INFORMATION THERMAL INFORMATIO N Figure 4. MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE T C - Case Temperature - °C 0 25 50 75 100 125 150 P tot - Maximum Power Dissipation - W 100 120 140 TIS140AA

JUNE 1993 - REVISED MARCH 1997 BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS PRODUCT INFORMATION SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. MECHANICAL DAT A SOT-93 ALL LINEAR DIMENSIONS IN MILLIMETERS 4,90 4,70 1,37 1,17 0,78 0,50 2,50 TYP. 15,2 14,7 12,2 MAX. 16,2 MAX. 18,0 TYP. 31,0 TYP. 1,30 1,10 11,1 10,8 4,1 4,0 3,95 4,15 1 2 3 NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW ø

BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 199 7 PRODUCT INFORMATION IMPORTANT NOTIC E Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS . Copyright © 1997, Power Innovations Limited