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Technical content

Features

  • High DC Current Gain − HFE = 1000 (min) @ 5 Adc
  • Monolithic Construction with Built−in Base Emitter Shunt Resistors
  • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Max Unit Collector−Emitter Voltage VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak IC 10 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 125 1.0 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg -65 to +/C8202150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R/C0113JC 1.0 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOT−93 (TO−218) CASE 340D

10 AMPERE DARLINGTON

60−80−100−120 VOLTS,

125 WATTS

http://onsemi.com COLLECTOR 2,4 BASE EMITTER 3 COLLECTOR 2 BASE EMITTER 3 NPN PNP BDV65B BDV64B TO−247 CASE 340L STYLE 3 NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

BDV65B (NPN), BDV64B (PNP) http://onsemi.com MARKING DIAGRAMS BDV6xB AYWWG

1 BASE

2 COLLECTOR

3 EMITTER

BDV6xB = Device Code x = 4 or 5 A = Assembly Location Y = Year WW = Work Week G= P b −Free Package TO−247 TO−218 Device Order Number Package Type Shipping BDV65BG TO−218 (Pb−Free)

30 Units / Rail

BDV64BG TO−218 (Pb−Free) BDV65BG TO−247 (Pb−Free) BDV64BG TO−247 (Pb−Free) 1.0 0.8 0 25 50 100 125 150 Figure 1. Power Derating

BDV65B (NPN), BDV64B (PNP) http://onsemi.com ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic ÎÎÎÎÎ ÎÎÎÎÎ Symbol ÎÎÎ ÎÎÎ Min ÎÎÎÎ ÎÎÎÎ Max ÎÎÎ ÎÎÎ Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ VCEO(sus) ÎÎÎ ÎÎÎ ÎÎÎ 100 ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ÎÎÎÎÎ ÎÎÎÎÎ ICEO ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ 1.0 ÎÎÎ ÎÎÎ mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ICBO ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 0.4 ÎÎÎ ÎÎÎ ÎÎÎ mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCB = 50 Vdc, IE = 0, TC = 150°C) ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ICBO ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 2.0 ÎÎÎ ÎÎÎ ÎÎÎ mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ÎÎÎÎÎ ÎÎÎÎÎ IEBO ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ 5.0 ÎÎÎ ÎÎÎ mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ hFE ÎÎÎ ÎÎÎ ÎÎÎ 1000 ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.02 Adc) ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ VCE(sat) ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 2.0 ÎÎÎ ÎÎÎ ÎÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter Saturation Voltage (IC = 5.0 Adc, VCE = 4.0 Vdc) ÎÎÎÎÎ ÎÎÎÎÎ VBE(on) ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ 2.5 ÎÎÎ ÎÎÎ Vdc

Figure 7. Thermal Response

BDV65B (NPN), BDV64B (PNP) http://onsemi.com PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR A D V G K S L U B Q 12 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER.E C J H DIM MIN MAX MIN MAX INCHESMILLIMETERS B 14.70 15.20 0.579 0.598 C 4.70 4.90 0.185 0.193 D 1.10 1.30 0.043 0.051 E 1.17 1.37 0.046 0.054 G 5.40 5.55 0.213 0.219 H 2.00 3.00 0.079 0.118 J 0.50 0.78 0.020 0.031 K 31.00 REF 1.220 REF Q 4.00 4.10 0.158 0.161 S 17.80 18.20 0.701 0.717 U 4.00 REF 0.157 REF V 1.75 REF 0.069 TO−247 CASE 340L−02 ISSUE F N P A K W F D G U E 0.25 (0.010) M YQ S J H C 123 −T− −B− −Y− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 PL 3 PL 0.63 (0.025) M TB M −Q− L DIM MIN MAX MIN MAX INCHESMILLIMETERS A 20.32 21.08 0.800 8.30 B 15.75 16.26 0.620 0.640 C 4.70 5.30 0.185 0.209 D 1.00 1.40 0.040 0.055 E 1.90 2.60 0.075 0.102 F 1.65 2.13 0.065 0.084 G 5.45 BSC 0.215 BSC H 1.50 2.49 0.059 0.098 J 0.40 0.80 0.016 0.031 K 19.81 20.83 0.780 0.820 L 5.40 6.20 0.212 0.244 N 4.32 5.49 0.170 0.216 Q 3.55 3.65 0.140 0.144 U 6.15 BSC 0.242 BSC W 2.87 3.12 0.113 0.123 STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR

BDV65B (NPN), BDV64B (PNP) http://onsemi.com ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 BDV65B/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative