BDV64-S BOURNS | Alldatasheet

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BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS /g80 /g82/g79 /g68 /g85/g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 1JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

  • Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C
  • 125 W at 25°C Case Temperature
  • 12 A Continuous Collector Current
  • Minimum hFE of 1000 at 4 V, 5 A absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. This value applies for t p ≤ 0.1 ms, duty cycle ≤ 10% 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) BDV64 BDV64A BDV64B BDV64C V CBO -60 -80 -100 -120 V Collector-emitter voltage (I B = 0) BDV64 BDV64A BDV64B BDV64C V CEO -60 -80 -100 -120 V Emitter-base voltage V EBO -5 V Continuous collector current IC -12 A Peak collector current (see Note 1) I CM -15 A Continuous base current IB -0.5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P tot 125 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P tot 3.5 W Operating junction temperature range T j -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm from case for 10 seconds T L 260 °C SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAA B C E OBSOLETE

BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS /g80/g82/g79/g68/g85 /g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 4. These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = -30 mA I B = 0 (see Note 4) BDV64 BDV64A BDV64B BDV64C -60 -80 -100 -120 V I CEO Collector-emitter cut-off current V CB = - 3 0 V VCB = -40 V VCB = -50 V VCB = -60 V IB =0 IB =0 IB =0 IB =0 BDV64 BDV64A BDV64B BDV64C mA I CBO Collector cut-off current V CB = - 6 0 V VCB = -80 V VCB = -100 V VCB = -120 V VCB = - 3 0 V VCB = -40 V VCB = -50 V VCB = -60 V IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C -0.4 -0.4 -0.4 -0.4 mA I EBO Emitter cut-off current V EB = -5 V I C =0 - 5 m A hFE Forward current transfer ratio V CE = -4 V I C = -5 A (see Notes 4 and 5) 1000 VCE(sat) Collector-emitter saturation voltage IB = -20 mA I C = -5 A (see Notes 4 and 5) -2 V VBE Base-emitter voltage VCE = -4 V I C = -5 A (see Notes 4 and 5) -2.5 V VEC Parallel diode forward voltage I E = -10 A I B = 0 (see Notes 4 and 5) -3.5 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1° C / W RθJA Junction to free air thermal resistance 35.7 °C/W OBSOLETE

BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS /g80/g82/g79/g68/g85 /g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. THERMAL INFORMATION Figure 4. MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TC - Case Temperature - °C 0 25 50 75 100 125 150 Ptot - Maximum Power Dissipation - W 100 120 140 TIS140AA OBSOLETE