BDP947H6327XTSA1

BDP947_V01 INFINEON | Alldatasheet

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Technical content

BDP947_BDP949_BDP953 Silicon NPN Transistors

• For AF driver and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BDP948, BDP950, BDP954 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101 Type Marking Pin Configuration Package BDP947 BDP949 BDP953 BDP947 BDP949 BDP953 1=B 1=B 1=B 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C SOT223 SOT223 SOT223

BDP947_BDP949_BDP953 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage BDP947 BDP949 BDP953 VCEO 100 V Collector-base voltage BDP947 BDP949 BDP953 VCBO 120 Emitter-base voltage VEBO 5 Collector current IC 3 A Peak collector current, tp ≤ 10 ms ICM 5 Base current IB 200 mA Peak base current, tp ≤ 10 ms IBM 500 Total power dissipation- TS ≤ 100 °C Ptot 5 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 10 K/W

BDP947_BDP949_BDP953 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BDP947 IC = 10 mA, IB = 0 , BDP949 IC = 10 mA, IB = 0 , BDP953 V(BR)CEO 100 V Collector-base breakdown voltage IC = 100 µA, IE = 0 , BDP947 IC = 100 µA, IE = 0 , BDP949 IC = 0 , IE = 100 µA, BDP953 V(BR)CBO 120 Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector-base cutoff current VCB = 45 V, IE = 0 VCB = 45 V, IE = 0 , TA = 150 °C ICBO 0.1 µA Emitter-base cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA DC current gain2) IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 2 A, VCE = 2 V, BDP947, BDP949 IC = 2 A, VCE = 2 V, BDP953 hFE 100 475 Collector-emitter saturation voltage2) IC = 2 A, IB = 0.2 A VCEsat - - 0.5 V Base emitter saturation voltage2) IC = 2 A, IB = 0.2 A VBEsat - - 1.3 AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz fT - 100 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 25 - pF 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300µs; D < 2%

BDP947_BDP949_BDP953 DC current gain hFE = ƒ(IC) VCE = 2 V 10 0 10 1 10 2 10 3 10 4 mA IC 0 10 1 10 2 10 3 10 hFE -55°C 25°C 100°C Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 VCEsat 0 10 1 10 2 10 3 10 4 10 mA IC 100°C 25°C -50°C Base-emitter saturation voltage IC = (VBEsat), hFE = 10 VBEsat 0 10 1 10 2 10 3 10 4 10 mA IC -50°C 25°C 100°C Collector current IC = ƒ(VBE) VCE = 2 V VBE 0 10 1 10 2 10 3 10 4 10 mA IC -50°C 25°C 100°C

BDP947_BDP949_BDP953 Collector cutoff current ICBO = ƒ(TA) VCB = 45 V 0 20 40 60 80 100 120 °C 150 TA -1 10 0 10 1 10 2 10 3 10 4 10 5 10 nA ICB0 max typ Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 0 4 8 12 16 V 22 VCB(VEB 100 150 200 250 300 350 400 pF 500 CCB(CEB) CCB CEB Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 ts 0.5 1.5 2.5 3.5 4.5 W 5.5 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 RthJS D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005

BDP947_BDP949_BDP953 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

BDP947_BDP949_BDP953Package SOT223 Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 12 3 ±0.1 ±0.04 0.5 MIN. 0.28 0.1 MAX. 15˚ MAX. 6.5±0.2 A 4.6 2.30.7±0.1

0.25 M A

1.6±0.1 7±0.3 B0.25 M ±0.23.5 B 3.5 1.4 4.8 1.4 1.11.2 8 0.3 MAX. 6.8 7.55 1.75Pin 1 Manufacturer 0...10˚

BDP947_BDP949_BDP953 Edition 2009-11-16 Published by Infineon Technologies AG

81726 Munich, Germany

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