BDP947 INFINEON | Alldatasheet

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Technical content

BDP947, BDP949

1 Aug-06-2001

/G01 For AF driver and output stages /G01 High collector current /G01 High current gain /G01 Low collector-emitter saturation voltage /G01 Complementary types: BDP948, BDP950 (PNP) VPS051631 Type Marking Pin Configuration Package BDP947 BDP949 BDP 947 BDP 949 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E 4 = C 4 = C SOT223 SOT223 Maximum Ratings Parameter BDP 947Symbol BDP 949 Unit V60Collector-emitter voltage VCEO 45 Collector-base voltage 45 60VCBO VEBO 5 5Emitter-base voltage

3 ADC collector current IC

Peak collector current 5ICM Base current IB 200 mA Peak base current IBM 500 Total power dissipation, TS = 99 °C W3Ptot °CJunction temperature 150Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 17 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

BDP947, BDP949

2 Aug-06-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BDP947 BDP949 V(BR)CEO V Collector-base breakdown voltage IC = 100 µA, IB = 0 BDP947 BDP949 V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 45 V, IE = 0 ICBO - - 100 nA Collector cutoff current VCB = 45 V, IE = 0 , TA = 150 °C ICBO - - 20 µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA DC current gain 1) IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 2 A, VCE = 2 V hFE 475 Collector-emitter saturation voltage1) IC = 2 A, IB = 0.2 A VCEsat - - 0.5 V Base-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A VBEsat - - 1.3 AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz fT - 100 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 25 - pF 1) Pulse test: t ≤=300µs, D = 2%

BDP947, BDP949

3 Aug-06-2001

Total power dissipation Ptot = f (TS ) 0 20 40 60 80 100 120 °C 150 TS 0.4 0.8 1.2 1.6 2.4 W 3.2 P tot Permissible Pulse Load R thJS = f (tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -2 10 -1 10 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 DC current gain hFE = f (IC ) VCE = 2V 10 0 10 1 10 2 10 3 10 4 mA IC 0 10 1 10 2 10 3 10 hFE -55°C 25°C 100°C Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

BDP947, BDP949

4 Aug-06-2001

Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 VCEsat 0 10 1 10 2 10 3 10 4 10 mA IC 100°C 25°C -50°C Collector cutoff current ICBO = f (TA ) VCB = 45V 0 20 40 60 80 100 120 °C 150 TA -1 10 0 10 1 10 2 10 3 10 4 10 5 10 nA ICBO max typ Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 VBEsat 0 10 1 10 2 10 3 10 4 10 mA IC -50°C 25°C 100°C Collector current IC = f (VBE ) VCE = 2V VBE 0 10 1 10 2 10 3 10 4 10 mA IC -50°C 25°C 100°C