BD939

BD941 PHILIPS | Alldatasheet

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BD933; 935 BD937; 939 BDA PHILIPS INTERNATIONAL SbE D Ml 7110826 0043044 4146 MEPHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T*33-09 N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. P-N-P complements are BD934; 936; 938; 940 and 942. QUICK REFERENCE DATA BD933 |935 |937 |939 [941 Collector-base voltage VcBo max. 45) 60}100)120/140 V Collector-emitter voltage Vceo max. 45] 60] 80|100]120 v Collector current (d.c.) Ic max. 3 A Total power dissipation up to Typ = 25 OC Prot max. 30 w Junction temperature Tj max. 150 oc D.C, current gain Ig = 180 mA; Voge = 2V bee 40 to 250 IG=1A;Vce#2V hee | > 25 Transition frequency Ig = 250 mA; Voce = 10 V tt > 3 MHz MECHANICAL DATA Dimensions in mm Fig. 1 TO-220. Collector connected to mounting base. j<— Bess — | As — |__d | 1 KN 28 A 59 Ove Fle 2 ~| 15.8 ii mex t + 3 somx |] TTT not tinned, [| LI _ 3° | | t Vids 1.3_,| in max x) ] iffelils | tL os | jos los alah 24 MSA 2itese we enn See also chapters Mounting instructions and Accessories. August 1991 331

BD933; 935 BD937; 939 BD941 ~ PHILIPS INTERNATIONAL SbE D MM 7110826 oo43zo4s 352 MEPHIN RATINGS T. Limiting values in accordance with the Absolute Maximum System (IEC 134) ~33-09 BD933 |935 | 937 |939 }941 Collector-base voltage (open emitter) VcBo. max. 45} 60) 100)120)140 Vv Collector-emitter voltage (open base) VcEO max. 45} 60] 80|100]120 v Emitter-base voltage (open collector) Vepo max. 5 v Collector current (d.c.) Ic max. 3 A Collector current (peak value) Iom max. 7 A Base current (d.c.) Ur) max. 05 A Total power dissipation up to Tm = 25°C Pot max. 30 w Storage temperature Tstg —65 to + 150 oc Junction temperature Tj max. 150 °C THERMAL RESISTANCE From junction to mounting base Rthj-mb = 417 KW From junction to ambient in free air Rthea = 70 KW CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector cut-off current 'e = 0: Veg = VeBomax ‘cao < 50 HA 1g = 0; Veg = VoBomaxi Tj = 150 °C leBo < 1 mA 'g = 0; VcE = VcEOmax 'cEO < 01 Le Emitter cut-off current Io =0;Vep=5V 1EBO < 0,2 mA D.C. current gain * Io = 160 mA; Vcg =2V hee 40 to 250 Io= 1A; VoE=2V hee > 25 Base-emitter voltage ** Ig=1A;Vog=2V VBE < 13 v Collector-emitter saturation voltage * Ic=1A;Ip=0,1A VoEsat < 0.6 Vv Transition frequency at f = 1 MHz Ic = 250 mA; VcE = 10 V fT > 3 MHz Switching times 'Con = 1 A; !Bon = ~!Boft= 0.1 A ton typ 04 us turn-on time < 1 MS Turn-off time toft ye. "8 “ Second-breakdown collector current VCE = 40 V; ty = 0,1 5; non-repetitive \\ysB) > 0,75 A * Measured under pulse conditions: tp < 300 us; 5 < 2%. ** Ve decreases by about 2,3 mV/K with increasing temperature.

332 July 1988

BD933; 935 Silicon epitaxial base power transistors BD937; 939 BD941 - PHILIPS INTERNATION MD ep nt rn nnn AL SbE D Mm 71 woura % j2bhO62b 0043045 299 mMPHIN vox} — Ipon ~ 7-33-09 10% bo=— LU... — ~|B off 90% |---| t— 'con 1o%-—-—1 >| Ti aie t Ton ol tope be Fig. 2 Switching times waveforms. Veco Veco = 20V Vim = 16V Ra -Vpp = 6,4V RI = 822 TUT. R2 = 822 Vvim— R2 R3 = 822 RA = 202 [') | tp=tp = 15ns alt t = 10ps | ° | RT RS PZ s00 us i_ T+! 7278131 f Ves Fig. 3 Switching times test circuit. | October 1985 333

BD933; 935 | BD937; 939 T-33-09

7 BD941

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== Saas Feet a ON A aN 1 TN \\ man NN 9074 ff tt SSS SSS Serer SEs [Ft te | aa OE OE AO - [TTT epess Aa | | TTT ppeseta TTT ETT seas [11 wo-? BD941 ul 1 10 107 Ve (V) Fig. 4 Safe Operating Area, Trnp = 25 °C. 1 Region of permissible d.c. operation. Il Permissible extension for repetitive pulse operation. (1) Prot max Nd Ppeak max lines. - (2) Second-breakdown limits,

334 April 1981

oe BD933; 935 Silicon epitaxial base power transistors T-33-09 BD937;'939 ae es —-BD941 PHILIPS INTERNATIONAL SbE D MM@ 7110826 0043048 Ob1 MMPHIN -- 102 7282178 FE eS A OS A SG SO a A BN OG OS pot Ee Fe ns OO 8 Vy Ty mL — FLEE PE 10 --——>, 0,01 SS Eee eH K-71 A BO OH [a 0,08 SS 0, (Ee ey PSS Eos oe PN ae ee ll Pest HESS CS Ph 1 [Ore et 10-1 1 10 tp (ms) 102 Fig. 5 Second-breakdown voltage multiplying factor at the I¢mmax level and second-breakdown current multiplying factor at the VcEOmax level. 7282150 a ee a a Z¢hj-mb FE (KA) FT od es ee a a | | |

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10-2 10-1 1 10 102 103 4, (ms) 10% Fig. 6 Pulse power rating chart. | April 1981 335

Booss;935 {ft BD937; 939 | 1-33-09 BD941 «= = PHILIPS INTERNATIONAL SbE D Ml 7110826 0043049 TTS MMPHIN NO ee ees See ee ee eee eee eee a Voesat -— ee imy) EET a SE | TN ESHA Nig PE A 6 OS 4A Po PA NS So 3a Ha TT KH 2a LT TT wo LLIN TT ESE Ee i105 A EE KEE a 4 a SS A A 6 OD a A 0 OO a ot LTTE TP TTRET PATTER TTT 1 10 102 103 Ig (ma) 104 Fig. 7 Typical collector-emitter saturation voltage as a function of base current with collector _ current as a parameter.

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Bec) ECEPEREEE EEE ee EREEEEEHE ET NEE EEE coo Hi rH coer CI Poy sagatass NEM CI Acne I EEN POC o CEEEEEE HEEL EEN LOE Ao 0 100 7.4%) 200 0 0.5 1 1s J Vee (V) Fig. 8 Power derating curve. Fig. 9 Veg = 2V; 7) = 259C.

336 April 1981

a in| BD933; 935 Silicon epitaxial base power transistors 1-33-09 BD937; 939 a b= PHILIPS INTERNATIONAL SbE D MM 7410826 0043050 717 MMPHIN 108 ee OO SS GO UO es a a a a bn =r28¢e THE hee [_Ti= 128 ST poe TT A AS 10? tS eS A A SS SS A A SAA GS Hs PS SS OO eS A RS SE A A SS OO SS Se [NRT ee OO eS Po NN or So ll 10-2 10-1 1 Ig (Al 10 Fig. 10 Typical static forward current transfer ratio as a function of the collector current. Vcg = 2 V April 1981 337