BD941F PHILIPS | Alldatasheet
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BD933F; BD935F BD937F; BD939F a __BD941F — PHILIPS INTERNATIONAL SbE D MM 7110826 0043052 592 MBPHIN-— SILICON EPITAXIAL POWER TRANSISTORS T- 33-07 NPN silicon power transistor ina SOT 186 envelope with an electrically insulated mounting base, intended for use in audio output stages and for general purpose amplifier applications, PNP complements are BD934F, BD936F, BD938F, BD940F and BD942F., QUICK REFERENCE DATA BD933F| 935F | 937F | 939F | 941F Collector-base voltage (open emitter) Vepo max. +45 | 60 | 100} 120] 140 v Collector-emitter voltage {open base) Vceo ~=omax. «45 «| «60 | «680! 1001 120 v Emitter-base voltage (open collector) VEBO max. 5 Vv Collector current dc. Ic max. 3 A peak value Icom max. 7 A Total power dissipation up to Th = 25 °C Prot max. 19 w D.C. current gain Ic=1A;Vog=2V hee min. 25 Transition frequency at f = 1 MHz I¢ = 250 mA; VcE = 10 V fr min, 3 MHz Fig.1 SOT186. Dimensions in mm 40,2max 5,7 max) bh 33] os 4 2,9 max iid mF 44
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BD933F; BD935F BD937F; BD939F BD941F - PHILIPS INTERNATIONAL SbE D MM 7110826 0043053 429 MPHIN—— RATINGS T~33-07 Limiting values in accordance with the Absolute Maximum System (IEC 134) BD933F | 935F | 937F | 939F | 941F Collector-base voltage (open emitter) Vopo max. 45 | 60 | 100] 120 | 140 v Collector-emitter voltage (open base) Vceo max. 45 | 60 | 80]! 100! 120 v Emitter-base voltage {open collector) VEBO max. 5 Vv Collector current dc. Io max. 3 A peak value tom max. 7 A Base current (d.c.) Ip max. 05 A Total power dissipation up to Th = 25 OC (1) Prot max. 14 w up to Th = 25 °C (2) Prot max. 19 w Storage temperature Tstg —65 to 150 °C - Junction temperature Tj max. 150 °C - THERMAL RESISTANCE From junction to internal heatsink = Rthj-mb = 4A7 KW From junction to external heatsink (1) Rthj-h = = 9,17 KW From junction to external heatsink (2) Rthj-h = 6,67 KW From junction to ambient Rthj-a = 55 KW INSULATION Voltage allowed between all terminals and external heatsink, peak value (3) Vinsul max. 1000 v Insulation capacitance between collector and external heatsink Co-h typ. 12 pF (1) Mounted without heatsink compound and 30 + 5 newtons pressure on centre of envelope. (2) Mounted with heatsink compound and 30 + 5 newtons pressure on centre of envelope. (3) Heatsink temperature Ty = 25 OC; relative humidity Ry < 75%; atmospheric pressure Pamb = 1013 mbar.
340 May 1988
BD933F; BD935F Silicon epitaxial power transistors BD937F; BD939F a BD941F PHILIPS INTERNATIONAL SbE D MM 7410826 0043054 365 mmPHIN CHARACTERISTICS ——- Th = 25 OC unless otherwise specified 1-33-07 Collector cut-off currents le = 0; Vcp = VcBOmax 'cBo < 0,1 mA Ig = 0; Veg = VeBomax: Th = 150 °C lcBo < 3mA le = 0; Vc = VcEOmax 'CEO < 05 mA Emitter cut-off current I¢=0;Veg=5V leBo < 1 mA D.C. current gain (1) Ie=1A:Veg=2V hee > 26 Ig = 180 mA; Veg = 2V hee 40 to 250 Base-emitter voltage (1)+(2) Ig=1A;VcE=2V VBE < 13V Collector-emitter saturation voltage (1) I¢=1Aslg=0,1A Vcesat 3 << =(O6 V Transition frequency at f= 1 MHz Ig = 250 mA; Voge = 10 V fr > 3 MHz Second-breakdown collector current Voce = 40 V; tp = 15; non-repetitive, without heatsink Isp > 475 mA Switching times le= 1A; Igon = —IBoff = 0,1 A turn-on time ton tye. 04 ie . typ. 1.5 turn-off time toff a 3 Me Yeo Veco = 20V Vim = 16V 4 —Vep = 6.4V R1 = 829 y rw, R2 = 822 im 2 R3 = 822 ‘ LIL R4 = 202 [bt | a1 R3| tp=tp = 15ns or tp = 10us re70131 Veo Po =500 ps Fig. 2 Switching times test circuit. (1) Measured under pulse conditions: ty = 300 us; 8 = 0,02. (2) Vge decreases by about 2,3 mV/K with increasing temperature. | May 1988 341
BD933F; BD935F BD937F; BD939F BD941F T-33-07 ~~ PHILIPS INTERNATIONAL SbE D MM 7110826 QO43055 271 MMPHIN - 108 FE — eee a a 6» Ee Eee eee eee w a a LT IN ETT Freire f= | beet tore CEH FECES ip EET - Fel EH NBSSSISIHIN ET [iene TEIN SACO Cit PTT SSSRUST TT LUIS Re UT FESS IH PE SO a | [SOT Po ONE EH FINA HHH UII NL LUT et SSB Ne PEE 8° 1H a a A TT ne — ET COTTE poste ACTIN CECE LTT poe HEN eof TTT asin | oo HLTH 1 10 10? Vcetv) 10 Fig. 4 Safe Operating Area, Tamb = 25 °C. 1 Region of permissible d.c, operation. IL Permissible extension for repetitive pulse operation. (1) Prot max 29d Ppeak max lines. {2) Second-breakdown limits. Mounted without heatsink compound and 30 + 5 Newton pressure ‘on the centre of the envelope.
342 May 1988
Silicon epitaxial power transistors 1-33-07 BD937F BD930F BDF PHILIPS INTERNATIONAL SbE D MM 7110826 0043056 138 MMPHIN ~ a ee aw FCT CETTE TIME TCT aril er eg | nee | | Tl Mes TE errr tI UT Pri ae er UE TT mee iceseent eat ere eerim EU TM ETI ET eect TTT CTI FEY TTT TT - 4 107% 10~% 107 1 tp (s) 10 Fig. 5 Pulse power rating chart; mounted with heatsink compound and 30 + 5 Newton pressure on the envelope. eT i oe ET a 2 | A oC CME eT TT Perrine eet Serer PON set rit ie = meericeeente a= cat MAL Pens ec eri CN COI CPUC LT Je ite TTT CTT CTT CPPCC 10" 10° 10-3 10-2 10"? 1 tpi Fig. 6 Pulse power rating chart; mounted without heatsink compound and 30 + 5 Newton pressure on the envelope. May 1988 343
BD933F; BD935F BD937F; BD939F T-33-07 BD941F~ - PHILIPS INTERNATIONAL SbE D MM 7120826 0043057 074 MPHIN— wt i —_ Vora EETHHE EES HE = L | fw) TEC ee a Ne SESH Ea i SES Keres COIN SS ETE = NX | Poth TO a 5 = N wo UH TT CT: o 50 100 ay (0c) 150 2 10 100 tmay 1000 2000 Fig. 7 Total power dissipation and Fig. 8 Collector-emitter saturation ‘second-breakdown current derating curve, voltage; typical values. 90 me rng 2 COOLIO 7294595 ee CCHIT SCH a fe i - LC TTT NTT CECE ere fy \\ I_| rs \\ : ST SeSeeeenr ie EEE Ee Een LT ti tt: | yee a || | CEEPLE Ly A COC ee 1 0 oot ot 1 ita) 19 ° OS ew? le ne typical values;