BD9139MUV-E2 | DigiCamel IC Datasheet

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BD9139MUV_14 ROHM | Alldatasheet

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 26

Technical content

Features

 Fast Transient Response because of Current Mode PWM Control System.  High Efficiency for All Load Ranges because of Synchronous Switches (Nch/Nch FET) and SLLMTM (Simple Light Load Mode)  Soft-Start Function  Thermal Shutdown and UVLO Functions  Short-Circuit Protection with Time Delay Function  Shutdown Function

Applications

Power Supply for LSI including DSP, Microcomputer and ASIC Key Specifications  Input Voltage Range: 2.7V to 5.5V  Output Voltage Range: 0.8V to 3.3V  Output Current: 3.0A (Max)  Switching Frequency: 1MHz(Typ)  High Side FET ON-Resistance: 100mΩ(Typ)  Low Side FET ON-Resistance: 80mΩ(Typ)  Standby Current: 0μA (Typ)  Operating Temperature Range: -40°C to +105°C Package W(Typ) x D(Typ) x H(Max) Typical Application Circuit VQFN016V3030 3.00mm x 3.00mm x 1.00mm EN ADJ ITH PVCC VCC SWGND, PGND CINVCC RITH CITH VOUT CO L CBST C1Rf Datasheet

1 SW Power switch node 9 VCC Power supply input pin

2 SW Power switch node 10 EN Enable pin(Active High）

3 SW Power switch node 11 ADJ Output voltage detection pin

4 SW Power switch node 12 ITH GmAmp output pin/connected to

5 PVCC Power switch supply pin 13 GND Ground pin

6 PVCC Power switch supply pin 14 PGND Power switch ground pin

7 PVCC Power switch supply pin 15 PGND Power switch ground pin

8 BST Bootstrapped voltage input pin 16 PGND Power switch ground pin

Figure 3. Block Diagram

TSZ02201-0J3J0AJ00170-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 03.Oct.2014 Rev.002 www.rohm.com TSZ22111・15・001 Absolute Maximum Ratings (Ta=25°C) (Note 1) Pd should not be exceeded. (Note 2) IC only (Note 3) Mounted on a 1-layer 74.2mmx74.2mmx1.6mm glass-epoxy board, occupied area by copper foil : 6.28mm2 (Note 4) Mounted on a 4-layer 74.2mmx74.2mmx1.6mm glass-epoxy board, occupied area by copper foil : 6.28mm2 , in each layers (Note 5) Mounted on a 4-layer 74.2mmx74.2mmx1.6mm glass-epoxy board, occupied area by copper foil : 5505mm2, in each layers Caution: Operating the IC over the absolute maximum ratings may damage the I C. The damage can either be a short circuit between pins or an open circuit between pins and internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fus e, in case the IC is operated over the absolute maximum ratings. Recommended Operating Conditions (Ta=-40°C to +105°C) (Note 6) In case the output voltage is set to 1.6V or more, VCCMin= VOUT+1.3V (Note 7) Pd should not be exceeded. Electrical Characteristics (Unless otherwise specified, Ta=25°C VCC=PVCC=3.3V, VEN=VCC, R1=10kΩ, R2=5kΩ.) Parameter Symbol Limit Unit VCC Voltage VCC -0.3 to +7 (Note 1) V PVCC Voltage PVCC -0.3 to +7 (Note 1) V BST Voltage VBST -0.3 to +13 V BST_SW Voltage VBST-SW -0.3 to +7 V EN Voltage VEN -0.3 to +7 V SW,ITH Voltage VSW, VITH -0.3 to +7 V Power Dissipation 1 Pd1 0.27 (Note 2) W Power Dissipation 2 Pd2 0.62 (Note 3) W Power Dissipation 3 Pd3 1.77 (Note 4) W Power Dissipation 4 Pd4 2.66 (Note 5) W Operating Temperature Range Topr -40 to +105 °C Storage Temperature Range Tstg -55 to +150 °C Maximum Junction Temperature Tjmax +150 °C Parameter Symbol Min Typ Max Unit Power Supply Voltage VCC 2.7 3.3 5.5 V PVCC 2.7 3.3 5.5 V EN Voltage VEN 0 - 5.5 V Output Voltage Setting Range VOUT 0.8 - 3.3(Note 6) V SW Average Output Current ISW - - 3.0(Note 7) A Parameter Symbol Min Typ Max Unit Conditions Standby Current ISTB - 0 10 µA EN=GND Active Current ICC - 200 500 µA EN Low Voltage VENL - GND 0.8 V Standby mode EN High Voltage VENH 2.0 VCC - V Active mode EN Input Current IEN - 3.3 10 µA VEN=3.3V Oscillation Frequency fOSC 0.8 1 1.2 MHz High Side FET ON-Resistance RONH - 100 165 mΩ PVCC=3.3V Low Side FET ON-Resistance RONL - 80 135 mΩ PVCC=3.3V ADJ Voltage VADJ 0.788 0.800 0.812 V ITH Sink Current ITHSI 10 18 - µA VADJ=1V ITH Source Current ITHSO 10 18 - µA VADJ=0.6V UVLO Threshold Voltage VUVLO1 2.400 2.500 2.600 V VCC=3.3V to 0V UVLO Release Voltage VUVLO2 2.425 2.550 2.700 V VCC=0V to 3.3V Soft-Start Time tSS 0.5 1 2 ms Timer Latch Time tLATCH 0.5 1 2 ms Output Short-Circuit Threshold Voltage VSCP - 0.40 0.56 V VADJ =0.8V to 0V

TSZ02201-0J3J0AJ00170-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 03.Oct.2014 Rev.002 www.rohm.com TSZ22111・15・001 4. Switching Regulator Efficiency Efficiency ŋ may be expressed by the equation shown below:   PdP P P P I V I V OUT OUT IN OUT IN IN OUTOUT Efficiency may be improved by reducing the switching regulator power dissipation factors Pdα as follows: Dissipation factors: (1) ON-Resistance Dissipation of Inductor and FET： Pd(I2R) where: RCOIL is the DC resistance of inductor. RON is the ON-Resistance of FET. IOUT is the Output current. (2) Gate Charge/Discharge Dissipation：Pd(Gate) where: Cgs is the Gate capacitance of FET. f is the Switching frequency. V is the Gate driving voltage of FET. (3) Switching Dissipation：Pd(SW) where: CRSS is the Reverse transfer capacitance of FET. IDRIVE is the Peak current of gate. (4) ESR Dissipation of Capacitor：Pd(ESR) where: IRMS is the Ripple current of capacitor. ESR is the Equivalent series resistance. (5) Operating Current Dissipation of IC：Pd(IC) where: ICC Circuit current. )(2)2( ONRCOILROUTI R IPd    CCIINVICPd  ) ( ESRRMSI ESRPd  2) ( DRIVEI fOUTIRSSCINVSWPd    ) ( 2) ( V fgsC GatePd   

Consideration on Permissible Dissipation and Heat Generation

dissipation and/or heat generation must be carefully considered. For dissipation, only conduction losses due to DC resistance of inductor and ON -Resistance of FET are considered. charge/discharge dissipation and switching dissipation. the dissipation shown above, thermal design must be carried out with sufficient margin. Figure 27. Thermal Derating Curve D is the ON duty (=VOUT/VCC). RONH is the ON-Resistance of High Side MOSFET. RONL is the ON-Resistance of Low Side MOSFET.

BD9139MUV Cautions on PCB Layout

Figure 36. Layout Diagram (2) Layout CITH and RITH between the pins ITH and GND as near as possible with least necessary wiring. Note: VQFN016V3030 (BD9139MUV) has thermal PAD on the reverse of the package.

Recommended Components Lists on Above Application

TSZ02201-0J3J0AJ00170-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 03.Oct.2014 Rev.002 www.rohm.com TSZ22111・15・001 Operational Notes 1. Reverse Connection of Power Supply Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply , such as mounting an external diode between the power supply and the IC ’s power supply pins. 2. Power Supply Lines Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog block . Furthermore, connect a capacitor to ground at all power supply pins . Consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. Ground Voltage Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. 4. Ground Wiring Pattern When using both small -signal and large -current ground traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large curr ents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance. 5. Thermal Consideration Should by any chance the power dissipati on rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the Pd rating. 6. Recommended Operating Conditions These conditions represent a range within which the expected characteristics of the IC can be approximately obtained. The e lectrical characteristics are guaranteed under the conditions of each parameter. 7. Inrush Current When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply. Therefore, give special cons ideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections. 8. Operation Under Strong Electromagnetic Field Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction. 9. Testing on Application Boards When testing the IC on an application board, connecting a capacitor directly to a low -impedance output pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. 10. Inter-pin Short and Mounting Errors Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few.

Regarding the Input Pin of the IC

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Figure 38. Example of monolithic IC structure

Thermal Shutdown Circuit(TSD)

the TSD threshold, the circuits are automatically restored to normal operation. recommended to start up the output with EN after supply voltage is within.

Ordering Information

(0.8V to 3.3V) Package MUV: VQFN016V3030 Package specification E2: Embossed taping Marking Diagram VQFN016V3030 (TOP VIEW) 3 9 Part Number Marking LOT Number 1PIN MARK D 9 1

Revision History

02.Mar.2012 001 New Release 03.Oct.2014 002 Applied the ROHM Standard Style and improved understandability.

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Minimum Package Quantity 3000 Packing Type Taping Constitution Materials List inquiry RoHS Yes BD9139MUV - Web Page Distribution Inventory

Product Information

BD9139MUV-E2 specifications and overview.

Summary

Synchronous Buck Converter with Integrated FET

Description

Synchronous Buck Converter with Integrated FET

Source title BD9139MUV-E2 Datasheet(PDF) - Rohm

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