BD9107FVM

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 29

Technical content

www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. Single-chip built-in FET type Switching Regulator Series High-efficiency Step-down Switching Regulators with Built-in Power MOSFET BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Description ROHM’s high efficiency step-down switching regulators (BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN) are the power supply designed to produce a low voltage includi ng 1 volts from 5/3.3 volts power supply line. Offers high efficiency with our original pulse skip control technology and synchronous rectifier. Employs a current mode control system to provide faster transient response to sudden change in load.
Features 1) Offers fast transient response with current mode PWM control system. 2) Offers highly efficiency for all load range with synchronous rectifier (Nch/Pch FET) and SLLM TM (Simple Light Load Mode) 3) Incorporates soft-start function. 4) Incorporates thermal protection and ULVO functions. 5) Incorporates short-current protec tion circuit with time delay function. 6) Incorporates shutdown function 7) Employs small surface mount package MSOP8 (BD9106FVM,BD9107FVM,BD9109FVM), HSON8 (BD9120HFN), SON008V5060 (BD9110NV)
Use Power supply for LSI including DSP, Micro computer and ASIC
Line up Parameter BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN Output Voltage Adjustable (1.0～2.5V) Adjustable (1.0～1.8V) 3.30±2% Adjustable (1.0～2.5V) Adjustable (1.0～1.5V) Short-current protection with time delay function built-in Soft start function built-in Standby current 0μA Typ. Operating Temperature Range -25 ～+85℃ -25 ～+85℃ -25 ～+85℃ -25 ～+105℃ -25 ～+85℃
Operating Conditions (Ta=25℃) Parameter Symbol BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN Unit EN voltage EN 0 V CC 0 V CC 0 V CC 0 V CC 0 V CC V *1 Pd should not be exceeded. No.09027EAT33

Absolute Maximum Rating (Ta=25℃) Parameter Symbol Limits Unit BD910□FVM BD9110NV BD9120HFN VCC voltage V CC -0.3 ～+7 *2 -0.3 ～+7 *2 -0.3 ～+7 *2 V PVCC voltage PVCC -0.3 ～+7 *2 -0.3 ～+7 *2 -0.3 ～+7 *2 V EN voltage EN -0.3 ～+7 -0.3 ～+7 -0.3 ～+7 V SW,ITH voltage SW,ITH -0.3 ～+7 -0.3 ～+7 -0.3 ～+7 V Power dissipation 1 Pd1 387.5 *3 900 *5 1350 *7 mW Power dissipation 2 Pd2 587.4 *4 3900 *6 1750 *8 mW Operating temperature range Topr -25 ～+85 -25 ～+105 -25 ～+85 ℃ Storage temperature range Tstg -55 ～+150 -55 ～+150 -55 ～+150 ℃ Maximum junction temperature Tjmax +150 +150 +150 ℃ *2 Pd should not be exceeded. *3 Derating in done 3.1mW/℃ for temperatures above Ta=25℃. *4 Derating in done 4.7mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB. *5 Derating in done 7.2mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB which has 1 layer (3%) of copper on the back side). *6 Derating in done 31.2mW/℃ for temperatures above Ta=25℃, Mounted on a board according to JESD51-7. *7 Derating in done 10.8mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB which has 1 layer (7%) of copper on the back side). *8 Derating in done 14mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB which has 1 layer (65%) of copper on the back side).
Electrical Characteristics ◎BD9106FVM (Ta=25℃, VCC=5V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.) Parameter Symbol Min. Typ. Max. Unit Conditions Standby current ISTB - 0 10 μA EN=GND Bias current ICC - 250 400 μA EN Low voltage VENL - GND 0.8 V Standby mode EN High voltage VENH 2.0 VCC - V Active mode EN input current IEN - 1 10 μA V EN=5V Oscillation frequency FOSC 0.8 1 1.2 MHz Pch FET ON resistance *9 R ONP - 0.35 0.60 Ω PV CC=5V Nch FET ON resistance *9 R ONN - 0.25 0.50 Ω PV CC=5V ADJ Voltage VADJ 0.780 0.800 0.820 V O u t p u t v o l t a g e *9 V OUT - 1.200 - V ITH SInk current ITHSI 10 20 - μA ADJ=H ITH Source Current I THSO 10 20 - μA ADJ=L UVLO threshold voltage V UVLOTh 3.2 3.4 3.6 V V CC=H→L UVLO hysteresis voltage V UVLOHys 50 100 200 mV Soft start time TSS 1.5 3 6 ms Timer latch time TLATCH 0.5 1 2 ms *9 Design Guarantee（Outgoing inspection is not done on all products） ◎BD9107FVM (Ta=25℃, VCC=5V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.) Parameter Symbol Min. Typ. Max. Unit Conditions Standby current ISTB - 0 10 μA EN=GND Bias current ICC - 250 400 μA EN Low voltage VENL - GND 0.8 V Standby mode EN High voltage VENH 2.0 VCC - V Active mode EN input current IEN - 1 10 μA V EN=5V Oscillation frequency FOSC 0.8 1 1.2 MHz Pch FET ON resistance *9 R ONP - 0.35 0.60 Ω PV CC=5V Nch FET ON resistance *9 R ONN - 0.25 0.50 Ω PV CC=5V ADJ Voltage VADJ 0.780 0.800 0.820 V O u t p u t v o l t a g e *9 V OUT - 1.200 - V ITH SInk current ITHSI 10 20 - μA V OUT =H ITH Source Current I THSO 10 20 - μA V OUT =L UVLO threshold voltage V UVLOTh 2.6 2.7 2.8 V V CC=H→L UVLO hysteresis voltage V UVLOHys 150 300 600 mV Soft start time TSS 0.5 1 2 ms Timer latch time TLATCH 0.5 1 2 ms *9 Design Guarantee（Outgoing inspection is not done on all products）

Electrical Characteristics ◎BD9109FVM (Ta=25℃, VCC=PVCC=5V, EN= VCC unless otherwise specified.) Parameter Symbol Min. Typ. Max. Unit Conditions Standby current ISTB - 0 10 μA EN=GND Bias current ICC - 250 400 μA EN Low voltage VENL - GND 0.8 V Standby mode EN High voltage VENH 2.0 VCC - V Active mode EN input current IEN - 1 10 μA V EN=5V Oscillation frequency FOSC 0.8 1 1.2 MHz Pch FET ON resistance *9 R ONP - 0.35 0.60 Ω PV CC=5V Nch FET ON resistance *9 R ONN - 0.25 0.50 Ω PV CC=5V O u t p u t v o l t a g e V OUT 3.234 3.300 3.366 V ITH SInk current ITHSI 10 20 - μA V OUT =H ITH Source Current I THSO 10 20 - μA V OUT =L UVLO threshold voltage V UVLO1 3.6 3.8 4.0 V V CC=H→L UVLO hysteresis voltage V UVLO2 3.65 3.9 4.2 V V CC=L→H Soft start time TSS 0.5 1 2 ms Timer latch time TLATCH 1 2 3 ms SCP/TSD operated Output Short circuit Threshold Voltage VSCP - 2 2.7 V V OUT =H→L *9 Design Guarantee（Outgoing inspection is not done on all products） ◎BD9110NV (Ta=25℃, VCC=PVCC=5V, EN=VCC, R1=10kΩ,R2=5kΩ unless otherwise specified.) Parameter Symbol Min. Typ. Max. Unit Conditions Standby current ISTB - 0 10 μA EN=GND Bias current ICC - 250 350 μA EN Low voltage VENL - GND 0.8 V Standby mode EN High voltage VENH 2.0 V CC - V Active mode EN input current IEN - 1 10 μA V EN=5V Oscillation frequency FOSC 0.8 1 1.2 MHz Pch FET ON resistance *9 R ONP - 200 320 m Ω PV CC=5V Nch FET ON resistance *9 R ONN - 150 270 m Ω PV CC=5V ADJ Voltage VADJ 0.780 0.800 0.820 V O u t p u t v o l t a g e *9 V OUT - 1.200 - V ITH SInk current ITHSI 10 20 - μA V OUT =H ITH Source Current I THSO 10 20 - μA V OUT =L UVLO threshold voltage V UVLOTh 3.5 3.7 3.9 V V CC=H→L UVLO hysteresis voltage V UVLOHys 50 100 200 mV Soft start time TSS 2.5 5 10 ms Timer latch time TLATCH 0.5 1 2 ms *9 Design Guarantee（Outgoing inspection is not done on all products） ◎BD9120HFN (Ta=25℃, VCC=PVCC=3.3V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.) Parameter Symbol Min. Typ. Max. Unit Conditions Standby current ISTB - 0 10 μA EN=GND Bias current ICC - 200 400 μA EN Low voltage VENL - GND 0.8 V Standby mode EN High voltage VENH 2.0 V CC - V Active mode EN input current IEN - 1 10 μA V EN=3.3V Oscillation frequency FOSC 0.8 1 1.2 MHz Pch FET ON resistance *9 R ONP - 0.35 0.60 Ω PV CC=3.3V Nch FET ON resistance *9 R ONN - 0.25 0.50 Ω PV CC=3.3V ADJ Voltage VADJ 0.780 0.800 0.820 V O u t p u t v o l t a g e *9 V OUT - 1.200 - V ITH SInk current ITHSI 10 20 - μA V OUT =H ITH Source Current I THSO 10 20 - μA V OUT =L UVLO threshold voltage V UVLO1 2.400 2.500 2.600 V V CC=H→L UVLO hysteresis voltage V UVLO2 2.425 2.550 2.700 V V CC=L→H Soft start time TSS 0.5 1 2 ms Timer latch time TLATCH 1 2 3 ms SCP/TSD operated Output Short circuit Threshold Voltage VSCP - V OUT×0.5 V OUT×0.7 V V OUT =H→L *9 Design Guarantee（Outgoing inspection is not done on all products）

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. 0.0 0.5 1.0 1.5 2.0 0123 OUTPUT CURRENT:IOUT[A] OUTPUT VOLTAGE:VOUT[V] VCC=5V Ta=25℃ 【VOUT=1.8V】 0.0 0.5 1.0 1.5 2.0 012345 INPUT VOLTAGE:V CC[V] OUTPUT VOLTAGE:VOUT[V] Ta=25℃ Io=0A 【VOUT=1.8V】 0.0 0.5 1.0 1.5 2.0 012345 EN VOLTAGE:VEN[V] OUTPUT VOLTAGE:VOUT[V] VCC=5V Ta=25℃ Io=0A 【VOUT=1.8V】 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 - 2 5 - 1 5- 5 5 1 52 53 54 55 5 6 57 58 5 TEMPERATURE:Ta[℃] OUTPUT VOLTAGE:VOUT[V] 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 - 2 5 - 1 5- 5 5 1 5 2 53 5 4 55 5 6 57 5 8 5 TEMPERATURE:Ta[℃] FREQUENCY:FOSC[MHz] 100 1 10 100 1000 OUTPUT CURRENT:I OUT[mA] EFFICIENCY:η[%] VCC=5V Io=0A 【VOUT=1.8V】 VCC=5V Ta=25℃ 【VOUT=1.8V】 VCC=5V

Characteristics data【BD9106FVM】 Fig.1 Vcc-Vout Fig.2 V en-Vout Fig.3 Iout-Vout Fig.4 Ta-Vout Fig.5 Efficiency Fig.6 Ta-Fosc Fig.7 Ta-Ronn, Ronp Fig.8 Ta-Ven Fig.9 Ta-Icc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 2 5 - 1 5- 5 5 1 52 53 54 55 5 6 57 58 5 TEMPERATURE:Ta[℃] EN VOLTAGE:VEN[V] 100 150 200 250 300 350 - 2 5 - 1 5- 5 5 1 52 5 3 54 55 56 57 58 5 TEMPERATURE:Ta[℃] CIRCUIT CURRENT:ICC [μA] 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 - 2 5 - 1 5- 5 5 1 52 5 3 54 55 56 57 58 5 TEMPERATURE:Ta[℃] ON RESISTANCE:R ON[Ω] PMOS NMOS VCC=5V VCC=5V VCC=5V

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. 0.8 0.9 1.1 1.2 44 . 555 . 5 INPUT VOLTAGE:VCC [V] FREQUENCY:FOSC[MHz] VOUT VCC=PVCC =EN SW VOUT VCC=5V Ta=25℃ 【SLLM control VOUT=1.8V】【VOUT=1.8V】 VCC=5V Ta=25℃ Io=0A Fig.10 Vcc-Fosc Fig.11 Soft start waveform Fig.12 SW waveform Io=10mA Fig.13 SW waveform Io=200mA Fig. 14 Transient response Io=100→600mA(10 μs) Fig.15 Transient response Io=600→100mA(10μs) VOUT IOUT VCC=5V Ta=25℃ 【VOUT=1.8V】 VOUT IOUT VCC=5V Ta=25℃ 【VOUT=1.8V】 VOUT VCC=5V Ta=25℃ SW 【P W M c o n t r o l VOUT=1.8V】

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. 0.0 0.5 1.0 1.5 2.0 012345 INPUT VOLTAGE:V CC[V] OUTPUT VOLTAGE:VOUT[V] Ta=25℃ Io=0A 0.0 0.5 1.0 1.5 2.0 0123 OUTPUT CURRENT:I OUT[A] OUTPUT VOLTAGE:VOUT[V] VCC=5V Ta=25℃ 0.0 0.5 1.0 1.5 2.0 012345 EN VOLTAGE:VEN[V] OUTPUT VOLTAGE:VOUT[V] VCC=5V Ta=25℃ Io=0A 【VOUT=1.5V】【VOUT=1.5V】【VOUT=1.5V】 100 1 10 100 1000 10000 OUTPUT CURRENT:IOUT[mA] EFFICIENCY:η[%] 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -25 -15 -5 5 15 25 35 45 55 65 75 85 TEMPERATURE:Ta[℃] FREQUENCY:FOSC[MHz] 1.45 1.46 1.47 1.48 1.49 1.50 1.51 1.52 1.53 1.54 1.55 - 2 5 - 1 5- 5 5 1 52 5 3 54 55 56 57 58 5 TEMPERATURE:Ta[℃] OUTPUT VOLTAGE:VOUT[V] 【VOUT=1.5V】【VOUT=1.5V】 VCC=5V Io=0A VCC=5V Ta=25℃ VCC=5V

Characteristics data【BD9107FVM】 Fig.16 Vcc-Vout Fig.17 Ven-Vout Fig.18 Iout-Vout Fig.19 Ta-Vout Fig.20 Efficiency Fig.21 Ta-Fosc Fig.22 Ta-R ONN, RONP Fig.23 Ta-VEN Fig.24 Ta-ICC Fig.22 温度-NMOS FET ON 抵抗 100 150 200 250 300 350 - 2 5 - 1 5- 5 5 1 52 53 54 55 56 57 58 5 TEMPERATURE:Ta[℃] CIRCUIT CURRENT:ICC[μA] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 2 5 - 1 5- 5 5 1 52 53 54 55 56 57 58 5 TEMPERATURE:Ta[℃] EN VOLTAGE:VEN[V] 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 - 2 5 - 1 5- 5 5 1 52 53 54 55 56 57 58 5 TEMPERATURE:Ta[℃] ON RESISTANCE:RON[Ω] PMOS NMOS VCC=5V VCC=5V VCC=5V

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. Fig.25 Vcc-Fosc Fig.26 Soft start waveform Fig.27 SW waveform Io=10mA Fig.28 SW waveform Io=500mA Fig. 29 Transient response Io=100→600mA(10μs) Fig.30 Transient response Io=600→100mA(10μs) 0.8 0.9 1.1 1.2 44 .555 .5 INPUT VOLTAGE:VCC [V] FREQUENCY:FOSC[MHz] VCC=5V Ta=25℃ 【SLLM control VOUT=1.5V】 VOUT VCC=PVCC =EN 【VOUT=1.5V】 VCC=5V Ta=25℃ Io=0A VOUT IOUT VCC=5V Ta=25℃ 【VOUT=1.5V】 SW VOUT VCC=5V Ta=25℃ 【P W M c o n t r o l VOUT=1.5V】 VCC=5V Ta=25℃ 【VOUT=1.5V】 VOUT IOUT SW VOUT

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 2 5 - 1 5- 5 5 1 52 53 54 55 56 57 58 5 TEMPERATURE:Ta[℃] EN VOLTAGE:VEN[V] 100 150 200 250 300 350 - 2 5 - 1 5- 5 5 1 52 53 54 55 56 57 58 5 TEMPERATURE:Ta[℃] CIRCUIT CURRENT:ICC[μA] 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 - 2 5 - 1 5- 5 5 1 52 53 54 55 56 57 58 5 TEMPERATURE:Ta[℃] ON RESISTANCE:RON[Ω] 0.0 1.0 2.0 3.0 4.0 0123 OUTPUT CURRENT:I OUT[A] OUTPUT VOLTAGE:VOUT[V] VCC=5V Ta=25℃ 0.0 1.0 2.0 3.0 4.0 012345 EN VOLTAGE:VEN[V] OUTPUT VOLTAGE:VOUT[V] VCC=5V Ta=25℃ Io=0A 0.0 1.0 2.0 3.0 4.0 012345 INPUT VOLTAGE:V CC[V] OUTPUT VOLTAGE:VOUT[V] Ta=25℃ Io=0A 100 1 10 100 1000 OUTPUT CURRENT:I OUT[mA] EFFICIENCY:η[%] 3.00 3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 - 2 5 - 1 5- 5 5 1 52 5 3 54 55 56 57 58 5 TEMPERATURE:Ta[℃] OUTPUT VOLTAGE:VOUT[V] 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -25 -15 -5 5 15 25 35 45 55 65 75 85 TEMPERATURE:Ta[℃] FREQUENCY:FOSC[MHz] VCC=5V Io=0A VCC=5V Ta=25℃ VCC=5V

Characteristics data【BD9109FVM】 Fig.31 Vcc-Vout Fig.32 V en-Vout Fig.33 Iout-Vout Fig. 34 Ta-Vout Fig.35 Efficiency Fig.36 Ta-Fosc Fig.37 Ta-Ronn, Ronp Fig.38 Ta-Ven Fig.39 Ta-Icc PMOS NMOS VCC=5V VCC=5V VCC=5V

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. 0.8 0.9 1.1 1.2 44 .555 .5 INPUT VOLTAGE:VCC[V] FREQUENCY:FOSC[MHz] Fig.40 Vcc-Fosc Fig.41 Soft start waveform Fig.42 SW waveform Io=10mA Fig.43 SW waveform Io=500mA Fig. 44 Transient response Io=100→600mA(10μs) Fig.45 Transient response Io=600→100mA(10μs) VCC=5V Ta=25℃ SW VOUT VCC=5V Ta=25℃ 【PWM control】 IOUT VOUT VCC=5V Ta=25℃ Io=0A SW VOUT VCC=5V Ta=25℃ 【SLLM control】 VOUT VCC=PVCC =EN VOUT IOUT VCC=5V Ta=25℃

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 2 5 - 1 5- 5 5 1 52 53 5 4 55 56 57 58 59 5 1 0 5 TEMPERATURE:Ta[℃] EN VOLTAGE:VEN[V] VCC=5V 100 150 200 250 300 350 400 - 2 5 - 1 5- 5 5 1 52 53 54 55 56 57 58 59 5 1 0 5 TEMPERATURE:Ta[℃] CIRCUIT CURRENT:ICC [μA] VCC=5V 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 - 2 5 - 1 5- 5 5 1 52 53 54 55 56 5 7 58 59 5 1 0 5 TEMPERATURE:Ta[℃] ON RESISTANCE:R ON[Ω] PMOS NMOS VCC=5V 0.0 0.5 1.0 1.5 2.0 01234 OUTPUT CURRENT:I OUT[A] OUTPUT VOLTAGE:VOUT[V] VCC=5V Ta=25℃ 0.0 0.5 1.0 1.5 2.0 012345 INPUT VOLTAGE:V CC[V] OUTPUT VOLTAGE:VOUT[V] Ta=25℃ Io=0A 0.0 0.5 1.0 1.5 2.0 012345 EN VOLTAGE:VEN[V] OUTPUT VOLTAGE:VOUT[V] VCC=5V Ta=25℃ Io=0A 【VOUT=1.4V】【VOUT=1.4V】【VOUT=1.4V】 100 10 100 1000 10000 OUTPUT CURRENT:I OUT[mA] EFFICIENCY:η[%] 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 - 2 5 - 1 5- 5 5 1 52 53 54 55 56 5 7 58 59 5 1 0 5 TEMPERATURE:Ta[℃] FREQUENCY:FOSC[MHz] 1.35 1.36 1.37 1.38 1.39 1.40 1.41 1.42 1.43 1.44 1.45 - 2 5 - 1 5- 5 51 52 53 54 55 56 5 7 58 59 5 1 0 5 TEMPERATURE:Ta[℃] OUTPUT VOLTAGE:VOUT[V] VCC=5V Io=0A 【VOUT=1.4V】 VCC=5V Ta=25℃ 【VOUT=1.4V】 VCC=5V

Characteristics data【BD9110NV】 Fig.46 Vcc-Vout Fig.47 Ven-Vout Fig.48 Iout-Vout Fig. 49 Ta-Vout Fig.50 Efficiency Fig.51 Ta-Fosc Fig.52 Ta-Ronn, Ronp Fig.53 Ta-Ven Fig.54 Ta-Icc

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. Fig.55 Vcc-Fosc Fig.56 Soft start waveform Fig.57 SW waveform Io=10mA Fig.58 SW waveform Io=500mA Fig. 59 Transient response Io=100→600mA(10μs) Fig.60 Transient response Io=600→100mA(10μs) VOUT IOUT VCC=5V Ta=25℃ 【VOUT=1.4V】 VOUT IOUT VCC=5V Ta=25℃ 【VOUT=1.4V】 SW VOUT VCC=5V Ta=25℃ 【P W M c o n t r o l VOUT=1.4V】 0.8 0.9 1.1 1.2 4 . 555 . 5 INPUT VOLTAGE:V CC [V] FREQUENCY:FOSC[MHz] Ta=25℃ VOUT VCC=PVCC =EN VCC=5V Ta=25℃ Io=0A SW VOUT VCC=5V Ta=25℃ 【S L L M c o n t r o l VOUT=1.4V】【VOUT=1.4V】

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. 0.0 0.5 1.0 1.5 2.0 012345 INPUT VOLTAGE:VCC[V] OUTPUT VOLTAGE:VOUT[V] Ta=25℃ Io=0A 0.0 0.5 1.0 1.5 2.0 012345 EN VOLTAGE:VEN[V] OUTPUT VOLTAGE:VOUT[V] VCC=3.3V 0.0 0.5 1.0 1.5 2.0 0123 OUTPUT CURRENT:I OUT[A] OUTPUT VOLTAGE:VOUT[V] 【VOUT=1.5V】 Io=0A 【VOUT=1.5V】【VOUT=1.5V】 VCC=3.3V Ta=25℃ 1.45 1.46 1.47 1.48 1.49 1.50 1.51 1.52 1.53 1.54 1.55 - 2 5 - 1 5- 5 5 1 52 5 3 54 5 5 5 6 57 5 8 5 TEMPERATURE:Ta[℃] OUTPUT VOLTAGE:VOUT[V] 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 - 2 5 - 1 5 - 5 5 1 52 5 3 54 55 56 5 7 58 5 TEMPERATURE:Ta[℃] FREQUENCY:FOSC[MHz] 100 1 10 100 1000 OUTPUT CURRENT:IOUT[mA] EFFICIENCY:η[%] VCC=3.3V Io=0A 【VOUT=1.5V】 VCC=3.3V Ta=25℃ 【VOUT=1.5V】 VCC=3.3V

Characteristics data【BD9120HFN】 Fig.61 Vcc-Vout Fig.62 V en-Vout Fig.63 Iout-Vout Fig. 64 Ta-Vout Fig.65 Efficiency Fig.66 Ta-Fosc Fig.67 Ta-Ronn, Ronp Fig.68 Ta-Ven Fig.69 Ta-Icc Ta=25℃ Fig. 64 Ta-VOUT 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 - 2 5 - 1 5 - 5 5 1 52 5 3 54 5 5 56 5 7 58 5 TEMPERATURE:Ta[℃] ON RESISTANCE:R ON[Ω] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 2 5 - 1 5 - 5 5 1 52 5 3 54 5 5 56 5 7 58 5 TEMPERATURE:Ta[℃] EN VOLTAGE:VEN[V] 120 150 180 210 240 270 300 - 2 5 - 1 5 - 5 5 1 52 5 3 54 55 56 5 7 58 5 TEMPERATURE:Ta[℃] CIRCUIT CURRENT:ICC [μA] PMOS NMOS VCC=3.3V VCC=3.3V VCC=3.3V

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. 0.8 0.9 1.1 1.2 2.7 3.6 4.5 INPUT VOLTAGE:V CC [V] FREQUENCY:FOSC[MHz] Ta=25℃ VOUT VCC=PVCC =EN VCC=3.3V Ta=25℃ Io=0A SW VOUT VCC=3.3V Ta=25℃ 【S L L M c o n t r o l V O U T = 1 . 5 V】【VOUT=1.5V】 Fig.70 Vcc-Fosc Fig.71 Soft start waveform Fig.72 SW waveform Io=10mA Fig.73 SW waveform Io=200mA Fig. 74 Transient response Io=100→600mA(10μs) Fig.75 Transient response Io=600→100mA(10 µs) VOUT IOUT VOUT IOUT VCC=3.3V Ta=25℃ 【VOUT=1.5V】 VCC=3.3V Ta=25℃ 【VOUT=1.5V】 SW VOUT VCC=3.3V Ta=25℃ 【PWM control V OUT=1.5V】

Block Diagram, Application Circuit 【BD9106FVM, BD9107FVM】 Fig.76 BD9106FVM,BD9107FVM TOP View Fig.77 BD9106FVM,BD9107FVM Block Diagram 【BD9109FVM】 Fig.78 BD9109FVM TOP View Fig.79. BD9109FVM Block Diagram

8 VCC

7 PVCC

5 PGND

1 ADJ

2 ITH

4 GND

1 VOUT

S EN VCC PVCC 10µF Input 4.7µH SW 10µF Output PGND GND ITH ADJ VCC SLOPE Current Comp. Gm Amp. CLK VCC VREF OSC UVLO TSD Current Sense/ Protect Driver Logic Soft Start RQ S EN VCC PVCC 10µF Input 4.7µH SW 10µF Output PGND GND ITH VOUT VCC SLOPE Current Comp. Gm Amp. CLK VCC SCP

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. 【BD9110NV】 Fig.80 BD9110NV TOP View Fig.81 BD9110NV Block Diagram 【BD9120HFN】 Fig.82 BD9120HFN TOP View Fig.83 BD9120HFN Block Diagram ADJ 1 VCC 2 ITH 3 GND 4 8 EN Gm Amp. 2.2µH VCC R S Q OSC UVLO TSD 22µF VCC VCC CLK SLOPE EN Current Comp 10µF Soft Start Current Sense/ Protect Driver Logic VREF ITHADJ RITH CITH R1 R2 ADJ ITH EN GND VCC PVCC SW PGND 8 1 4 5 TOP View 3.3V Input PVCC PGND SW GND Output Gm Amp. 4.7µH VCC R S Q OSC UVLO TSD 10µF VCC VCC CLK SLOPE EN Current Comp 10µF Soft Start Current Sense/ Protect Driver Logic VREF ITH ADJ RITH CITH R1 R2 1 2 SCP

Pin number and function 【BD9106FVM, BD9107FVM, BD9109FVM】 Pin No. Pin name PIN function

1 ADJ/V OUT Output voltage detect pin/ ADJ for BD9106 ･07FVM

2 ITH GmAmp output pin/Connected phase compensation capacitor

3 EN Enable pin(Active High)

4 GND Ground

5 PGND Nch FET source pin

6 SW Pch/Nch FET drain output pin

7 PV CC Pch FET source pin

8 V CC V CC power supply input pin

【BD9110NV】 Pin No. Pin name PIN function

1 ADJ Output voltage adjust pin

2 V CC V CC power supply input pin

3 ITH GmAmp output pin/Connected phase compensation capacitor

8 EN Enable pin(Active High)

【BD9120HFN】 Pin No. Pin name PIN function

Information on advantages Advantage 1：Offers fast transient response with current mode control system. Voltage drop due to sudden change in load was reduced by about 40%. Fig.84 Comparison of transient response Advantage 2： Offers high efficiency for all load range. ・For lighter load: Utilizes the current mode control mode called SLLMTM for lighter load, which reduces various dissipation such as switching dissipation (PSW), gate charge/discharge dissipation, ESR dissipation of output capacitor (PESR) and on-resistance dissipation (PRON) that may otherwise cause degradation in efficiency for lighter load. Achieves efficiency improvement for lighter load. ・For heavier load: Utilizes the synchronous rectifying mode and the low on-resistance MOS FETs incorporated as power transistor. ON resistance of P-channel MOS FET: 0.2～0.35 Ω (Typ.) ON resistance of N-channel MOS FET: 0.15～0.25 Ω (Typ.) Achieves efficiency improvement for heavier load. Offers high efficiency for all load range with the improvements mentioned above. Advantage 3 ：・Supplied in smaller package due to small-sized power MOS FET incorporated. (3 package like MOSP8, HSON8, SON008V5060) ・Allows reduction in size of application products Reduces a mounting area required. Fig.86 Example application ・Output capacitor Co required for current mode control: 10 μF ceramic capacitor ・Inductance L required for the operating frequency of 1 MHz: 4.7 μH inductor ( B D 9 1 1 0 N V : C o = 2 2 µ F , L = 2 . 2 µ H ) DC/DC Convertor Controller RITH L Co VOUT CITH VCC Cin 10mm 15mm RITH CITH CIN CO L VOUT IOUT 228mV VOUT IOUT 140mV Conventional product (VOUT of which is 3.3 volts) BD9109FVM (Load response IO=100mA→600mA) 0.001 0.01 0.1 1 100 PWM SLLMTM ①inprovement by SLLM system ②improvement by synchronous rectifier Efficiency η[%] Output current Io[A] Fig.85 Efficiency

Operation BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN are a synchronous rectifying step-down switching regulator that achieves faster transient response by employing current mode PWM control system. It utilizes switching operation in PWM (Pulse Width Modulation) mode for heavier load, while it utilizes SLLMTM (Simple Light Load Mode) operation for lighter load to improve efficiency. ○Synchronous rectifier It does not require the power to be dissipated by a rectifier externally connected to a conventional DC/DC converter IC, and its P.N junction shoot-through protection circuit limits the shoot-through current during operation, by which the power dissipation of the set is reduced. ○Current mode PWM control Synthesizes a PWM control signal with a inductor current feedback loop added to the voltage feedback. ・PWM (Pulse Width Modulation) control The oscillation frequency for PWM is 1 MHz. SET si gnal form OSC turns ON a P-channel MOS FET (while a N-channel MOS FET is turned OFF), and an inductor current I L increases. The current comparator (Current Comp) receives two signals, a current feedback control signal (SENSE: Voltage converted from IL) and a voltage feedback control signal (FB), and issues a RESET signal if both input signals are identical to each other, and turns OFF the P-channel MOS FET (while a N-channel MOS FET is turned ON) for the rest of the fixed period. The PWM control repeat this operation. ・SLLM TM (Simple Light Load Mode) control When the control mode is shifted from PWM for heavier load to the one for lighter load or vise versa, the switching pulse is designed to turn OFF with the device held operated in normal PWM control loop, which allows linear operation without voltage drop or deterioration in transient response during the mode switching from light load to heavy load or vise versa. Although the PWM control loop continues to operate with a SET signal from OSC and a RESET signal from Current Comp, it is so designed that the RESET signal is held issued if shifted to the light load mode, with which the switching is tuned OFF and the switching pulses are thinned out under control. Activati ng the switching intermittently reduces the switching dissipation and improves the efficiency. Fig.87 Diagram of current mode PWM control OSC Level Shift Driver Logic RQ S IL SW ITH Current Comp Gm Amp. SET RESET FB Load SENSE VOUT VOUT Fig.88 PWM switching timing chart Fig.89 SLLM switching timing chart Current Comp SET RESET SW VOUT PVCC GND GND GND I L(AVE) VOUT(AVE) SENSE FB Current Comp SET RESET SW VOUT PVCC GND GND GND VOUT(AVE) SENSE FB IL Not switching IL

Description of operations ・Soft-start function EN terminal shifted to “High” activates a soft-starter to gradually establish the output voltage with the current limited during startup, by which it is possible to prevent an overshoot of output voltage and an inrush current. ・Shutdown function With EN terminal shifted to “Low”, the device turns to Standby Mode, and all the function blocks including reference voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0 μF (Typ.). ・UVLO function Detects whether the input voltage sufficient to secure the output voltage of this IC is supplied. And the hysteresis width of 50～300 mV (Typ.) is provided to prevent output chattering. *Soft Start time(typ.) Fig.90 Soft start, Shutdown, UVLO timing chart BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN Unit Tss 3 1 1 5 1 msec ・Short-current protection circuit with time delay function Turns OFF the output to protect the IC from breakdown when the incorporated current limiter is activated continuously for the fixed time(TLATCH) or more. The output thus held tuned OFF may be recovered by restarting EN or by re-unlocking UVLO. *Timer Latch time (typ.) Fig.91 Short-current protection circuit with time delay timing chart BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN Unit TLATCH 1 1 2 1 2 msec ※ In addition to current limit circuit, output short detect circ uit is built in on BD9109FVM and BD9120HFN. If output voltage fall below 2V(typ, BD9109FVM) or Vout×0.5(typ,BD9120H FN), output voltage will hold turned OFF. Hysteresis 50～300mV Tss Tss Tss Soft start Standby mode Operating mode Standby mode Operating mode Standby mode Operating mode Standby mode UVLOEN UVLOUVLO VCC EN VOUT 1msec Output OFF latch EN VOUT Limit IL Standby mode Operating mode Standby mode Operating mode EN Timer latch EN

Switching regulator efficiency Efficiency ŋ may be expressed by the equation shown below: Efficiency may be improved by reducing the switching regulator power dissipation factors P Dα as follows: Dissipation factors: 1) ON resistance dissipation of inductor and FET：PD(I2R) 2) Gate charge/discharge dissipation：PD(Gate) 3) Switching dissipation：PD(SW) 4) ESR dissipation of capacitor：PD(ESR) 5) Operating current dissipation of IC：PD(IC) 1)PD(I 2R)=IOUT2×(RCOIL+RON) (RCOIL[Ω]：DC resistance of inductor, RON[Ω]：ON resistance of FETIOUT[A]：Output current.) 2)PD(Gate)=Cgs×f×V (Cgs[F]：Gate capacitance of FET,f[H] ：Switching frequency,V[V]：Gate driving voltage of FET) 4)PD(ESR)=I RMS2×ESR (I RMS[A]：Ripple current of capacitor,ESR[Ω]：Equivalent series resistance.) 5)PD(IC)=Vin×ICC ( I CC[A]：Circuit current.)
Consideration on permissible dissipation and heat generation As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation must be carefully considered. For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered. Because the conduction losses are considered to play the leading role among other dissipation mentioned above including gate charge/discharge dissipation and switching dissipation. If V CC=5V, VOUT=3.3V, RCOIL=0.15Ω, RONP=0.35Ω, RONN=0.25Ω IOUT=0.8A, for example, D=VOUT/VCC=3.3/5=0.66 =0.231+0.085 =0.316[Ω] ≒298[mV] As RONP is greater than RONN in this IC, the dissipation increases as the ON duty becomes greater. With the consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed. η= VOUT×IOUT Vin×Iin ×100[%]= POUT Pin ×100[%]= POUT POUT+PDα ×100[%] Vin2×CRSS×IOUT×f IDRIVE 3)PD(SW)= (CRSS[F]：Reverse transfer capacitance of FET、IDRIVE[A]：Peak current of gate.) 0 25 50 75 100 125 150 200 400 600 800 1000 ②387.5mW ①587.4mW ①mounted on glass epoxy PCB θ j-a=212.8℃/W ②Using an IC alone θ j-a=322.6℃/W Power dissipation:Pd [mW] Ambient temperature:Ta [℃] Fig.92 Thermal derating curve (MSOP8) Ambient temperature:Ta [℃] 0 25 50 75 100 125 150 0.5 1.0 1.5 ②0.64W ①0.90W Power dissipation:Pd [W] Ambient temperature:Ta [℃] Fig.94 Thermal derating curve (SON008V5060) ① for SON008V5060 ROHM standard 1layer board θ j-a=138.9℃/W ② Using an IC alone θ j-a=195.3℃/W 0 25 50 75 100 125 150 0.5 1.0 1.5 ②0.63W ①1.15W Power dissipation:Pd [W] Fig.93 Thermal derating curve (HSON8) ① mounted on glass epoxy PCB θ j-a=133.0℃/W ② Using an IC alone θ j-a=195.3℃/W 85 105 P=IOUT2×(RCOIL+RON) RON=D×RONP+(1-D)×RONN D：ON duty (=VOUT/VCC) RCOIL：DC resistance of coil RONP：ON resistance of P-channel MOS FET RONN：ON resistance of N-channel MOS FET IOUT：Output current

Selection of components externally connected 1. Selection of inductor (L) * Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases efficiency. The inductor must be selected allowing sufficient margin with which the peak current may not exceed its current rating. If V CC=5V, VOUT=3.3V, f=1MHz, ΔIL=0.3×0.8A=0.24A, for example,(BD9109FVM) * Select the inductor of low resistance component (such as DCR and ACR) to minimize dissipation in the inductor for better efficiency. 2. Selection of output capacitor (CO) As the output rise time must be designed to fall within the soft-start time, the capacitance of output capacitor should be determined with consideration on the requirements of equation (5): In case of BD9109FVM, for instance, and if V OUT=3.3V, IOUT=0.8A, and TSS=1ms, Inappropriate capacitance may cause problem in startup. A 10 μ F to 100 μF ceramic capacitor is recommended. 3. Selection of input capacitor (Cin) A low ESR 10μF/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better efficiency. The inductance significantly depends on output ripple current. As seen in the equation (1), the ripple current decreases as the inductor and/or switching frequency increases. ΔIL= (VCC-VOUT)×VOUT Appropriate ripple current at output should be 30% more or less of the maximum output current. ΔIL=0.3×IOUTmax. [A]・・・(2) (VCC-VOUT)×VOUT (ΔIL: Output ripple current, and f: Switching frequency) Output capacitor should be selected with the consideration on the stability region and the equivalent series resistance required to smooth ripple voltage. Output ripple voltage is determined by the equation (4)： ΔVOUT=ΔIL×ESR [V]・・・(4) (ΔIL: Output ripple current, ESR: Equivalent series resistance of output capacitor) *Rating of the capacitor should be determined allowing sufficient margin against output voltage. Less ESR allows reduction in output ripple voltage. Input capacitor to select must be a low ESR capacitor of the capacitance sufficient to cope with high ripple current to prevent high transient voltage. The ripple current IRMS is given by the equation (6): IRMS=IOUT× VOUT(VCC-VOUT) VCC [A]・・・(6) When VCC is twice the Vout, IRMS= IOUT Fig.96 Output capacitor (5-3.3)×3.3 < Worst case > IRMS(max.) If VCC=5V, VOUT=3.3V, and IOUTmax.=0.8A, (BD9109FVM) IRMS=0.8× 3.3(5-3.3) 5 =0.38[ARMS] Co≦ TSS×(Ilimit-IOUT) VOUT ・・・(5) Tss: Soft-start time Ilimit: Over current detection level, 2A(Typ) Fig.97 Input capacitor ΔIL Fig.95 Output ripple current IL VCC IL L Co VOUT VCC L Co VOUT ESR Co≦ 1m×(2-0.8) 3.3 ≒364 [μF] VCC L Co VOUT Cin

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. 4. Determination of RITH, CITH that works as a phase compensator As the Current Mode Control is designed to limit a inductor current, a pole (phase lag) appears in the low frequency area due to a CR filter consisting of a output capacitor and a load resistance, while a zero (phase lead) appears in the high frequency area due to the output capacitor and its ESR. So, the phases are easily compensated by adding a zero to the power amplifier output with C and R as described below to cancel a pole at the power amplifier. Stable feedback loop may be achieved by canceling the pole fp (Min.) produced by the output capacitor and the load resistance with CR zero correction by the error amplifier. 5. Determination of output voltage The output voltage V OUT is determined by the equation (7): VOUT=(R2/R1+1)×VADJ・・・(7) V ADJ: Voltage at ADJ terminal (0.8V Typ.) With R1 and R2 adjusted, the output voltage may be determined as required. Adjustable output voltage range ： 1.0V ～1.5V/ BD9107FVM, BD9120HFN 1.0V～2.5V/BD106FVM, BD9110NV Use 1 kΩ～100 kΩ resistor for R1. If a resistor of the resistance higher than 100 kΩ is used, check the assembled set carefully for ripple voltage etc. Fig.101 Determination of output voltage Fig.98 Open loop gain characteristics Fig.99 Error amp phase compensation characteristics fp= 2π×RO×CO fz(ESR)= 2π×ESR×CO Pole at power amplifier When the output current decreases, the load resistance Ro increases and the pole frequency lowers. fp(Min.)= 2π×ROMax.×CO 1 [Hz]←with lighter load fp(Max.)= 2π×ROMin.×CO 1 [Hz]←with heavier load Zero at power amplifier Increasing capacitance of the output capacitor lowers the pole frequency while the zero frequency does not change. (This is because when the capacitance is doubled, the capacitor ESR reduces to half.) fz (Amp.)= 2π×RITH.×CITH GND,PGND SW VCC,PVCC EN VOUT ITH VCC VOUT Cin RITH CITH L ESR CO RO VOUT Fig.100 Typical application fz(Amp.)= fp(Min.) 2π×RITH×CITH 1 = 2π×ROMax.×CO SW ADJ L Co R2 Output Gain [dB] Phase [deg] A -90 A -90 fz(Amp.) fp(Min.) fp(Max.) fz(ESR) IOUTMin. IOUTMax. Gain [dB] Phase [deg]

BD9106FVM, BD9107FVM, BD9109FVM, BD9120HFN Cautions on PC Board layout Fig.102 Layout diagram
BD9110NV Cautions on PC Board layout Fig.103 Layout diagram ① For the sections drawn with heavy line, use thick conductor pattern as short as possible. ② Lay out the input ceramic capacitor CIN closer to the pins PVCC and PGND, and the output capacitor Co closer to the pin PGND. ③ Lay out CITH and RITH between the pins ITH and GND as neat as possible with least necessary wiring. ※ The package of HSON8 (BD9120HFN) and SON008V5050 (BD9110NV) has thermal FIN on the reverse of the package. The package thermal performance may be enhanced by bonding the FIN to GND plane which take a large area of PCB. Table1. [BD9106FVM] Symbol Part Value Manufacturer Series L Coil 4.7μH Sumida CMD6D11B TDK VLF5014AT-4R7M1R1 CIN Ceramic capacitor 10μF Kyocera CM316X5R106K10A CO Ceramic capacitor 10μF Kyocera CM316X5R106K10A CITH Ceramic capacitor 750pF murata GRM18series RITH Resistance VOUT=1.0V 18k Ω ROHM MCR10 1802 VOUT=1.2V 22k Ω ROHM MCR10 2202 VOUT=1.5V 22k Ω ROHM MCR10 2202 VOUT=1.8V 27k Ω ROHM MCR10 2702 VOUT=2.5V 36k Ω ROHM MCR10 3602 VOUT/ADJ ITH EN GND V CC PVCC SW PGND CO GND VOUT VCC L ① EN RITH CITH CIN ADJ VCC ITH GND EN PV CC SW PGND VCC RITH GND Co CIN VOUT EN L CITH

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. Table2. [BD9107FVM] Symbol Part Value Manufacturer Series L Coil 4.7μH Sumida CMD6D11B TDK VLF5014AT-4R7M1R1 CIN Ceramic capacitor 10μF Kyocera CM316X5R106K10A CO Ceramic capacitor 10μF Kyocera CM316X5R106K10A CITH Ceramic capacitor 1000pF murata GRM18series RITH Resistance VOUT=1.0V 4.3k Ω ROHM MCR10 4301 VOUT=1.2V 6.8k Ω ROHM MCR10 6801 VOUT=1.5V 9.1k Ω ROHM MCR10 9101 VOUT=1.8V 12k Ω ROHM MCR10 1202 Table3. [BD9109VM] Symbol Part Value Manufacturer Series L Coil 4.7μH Sumida CMD6D11B TDK VLF5014AT-4R7M1R1 CIN Ceramic capacitor 10μF Kyocera CM316X5R106K10A CO Ceramic capacitor 10μF Kyocera CM316X5R106K10A CITH Ceramic capacitor 330pF murata GRM18series RITH Resistance 30kΩ ROHM MCR10 3002 Table4. [BD9110NV] Symbol Part Value Manufacturer Series L Coil 2.2 μH TDK LTF5022T-2R2N3R2 CIN Ceramic capacitor 10 μF Kyocera CM316X5R106K10A CO Ceramic capacitor 22 μF Kyocera CM316B226K06A CITH Ceramic capacitor 1000pF murata GRM18series RITH Resistance VOUT=1.0V 12kΩ ROHM MCR10 1202 VOUT=1.2V VOUT=1.5V VOUT=1.8V VOUT=2.5V Table5. [BD9120HFN] Symbol Part Value Manufacturer Series L Coil 4.7 μH Sumida CMD6D11B TDK VLF5014AT-4R7M1R1 CIN Ceramic capacitor 10 μF Kyocera CM316X5R106K10A CO Ceramic capacitor 10 μF Kyocera CM316X5R106K10A CITH Ceramic capacitor 680pF murata GRM18series RITH Resistance VOUT=1.0V 8.2k Ω ROHM MCR10 8201 VOUT=1.2V 8.2k Ω ROHM MCR10 8201 VOUT=1.5V 4.7k Ω ROHM MCR10 4701 *The parts list presented above is an example of recommended parts. Although the parts are sound, actual circuit characteristics should be checked on your application carefully before use. Be sure to allow sufficient margins to accommodate variations between external devices and this IC when employing the depicted circuit with other circuit constants modified. Both static and transient characteristics should be considered in establishing these margins. When switching noise is substantial and may impact the system, a low pass filter should be inserted between the VCC and PVCC pins, and a schottky barrier diode established between the SW and PGND pins.

I/O equivalence circuit 【BD9106FVM, BD9107FVM, BD9109FVM】【BD9110NV, BD9120HFN】 Fig.104 I/O equivalence circuit VCC EN 10kΩ ・EN pin ・SW pin PVCC SW PVCC PVCC VCC ADJ 10kΩ ・ADJ pin (BD9106FVM, BD9107FVM) VCC VOUT 10kΩ ・VOUT pin (BD9109FVM) VCC ITH VCC ・ITH pin EN 10kΩ ・EN pin ・SW pin PVCC SW PVCC PVCC ITH ・ITH pin (BD9120HFN) VCC ITH ・ITH pin (BD9110NV) VCC ・ADJ pin ADJ 10kΩ

Notes for use 1. Absolute Maximum Ratings While utmost care is taken to quality control of this product, any application that may exceed some of the absolute maximum ratings including the voltage applied and the operating temperature range may result in breakage. If broken, short-mode or open-mode may not be identified. So if it is expected to enc ounter with special mode that may exceed the absolute maximum ratings, it is requested to take necessary safety measures physically including insertion of fuses. 2. Electrical potential at GND GND must be designed to have the lowest electrical potential In any operating conditions. 3. Short-circuiting between terminals, and mismounting When mounting to pc board, care must be taken to avoid mistake in its orientation and alignment. Failure to do so may result in IC breakdown. Short-circ uiting due to foreign matters entered between output terminals, or between output and power supply or GND may also cause breakdown. 4.Operation in Strong electromagnetic field} Be noted that using the IC in the strong electromagnetic radiation can cause operation failures. 5. Thermal shutdown protection circuit Thermal shutdown protection circuit is the circuit designed to isolate the IC from thermal runaway, and not intended to protect and guarantee the IC. So, the IC the thermal shutdown protection circuit of which is once activated should not be used thereafter for any operation originally intended. 6. Inspection with the IC set to a pc board If a capacitor must be connected to the pin of lower impedance during inspection with the IC set to a pc board, the capacitor must be discharged after each process to avoid stress to the IC. For electrostatic protection, provide proper grounding to assembling processes with special care taken in handling and storage. When connecting to jigs in the inspection process, be sure to turn OFF the power supply before it is connected and removed. 7. Input to IC terminals This is a monolithic IC with P + isolation between P-substrate and each element as illustrated below. This P-layer and the N-layer of each element form a P-N junction, and various parasitic element are formed. If a resistor is joined to a transistor terminal as shown in Fig 59: ○P-N junction works as a parasitic diode if the following relationship is satisfied; GND>Terminal A (at resistor side), or GND>Terminal B (at transistor side); and ○if GND>Terminal B (at NPN transistor side), a parasitic NPN transistor is activated by N-layer of other element adjacent to the above-mentioned parasitic diode. The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits, and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in activation of parasitic elements. Fig.105 Simplified structure of monorisic IC 8. Ground wiring pattern If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well. (Pin A) P+ P+ N N N P P substrate Parasitic diode GND GND Parasitic diode or transistor N P N C (Pin B) B E GND P+ P+ N N Resistance Transistor (NPN) (Pin B) C E B GND (Pin A) GND P substrate Parasitic diode Parasitic diode or transistor

Ordering part number B D 9 1 1 0 N V - E 2 Part No. BD Part No. 9110 9120 9106 ,9107,9109 Package NV : SON008V5060 HFN:MSOP8 FVM:HSON8 Packaging and forming specification E2: Embossed tape and reel (SON008V5060,) TR: Embossed tape and reel (MSOP8, HSON8) (Unit : mm) MSOP8 0.08 S S 4.0±0.2 2.8±0.1 2.9±0.1 0.475 5 7 (MAX 3.25 include BURR) 1PIN MARK 0.9MAX 0.75±0.05 0.65 0.08±0.05 0.22 +0.05 –0.04 0.6±0.2 0.29±0.15 0.145 +0.05 –0.03 4°+6° −4° Direction of feed Reel ∗ Order quantity needs to be multiple of the minimum quantity. <Tape and Reel information> Embossed carrier tapeTape Quantity Direction of feed The direction is the 1pin of product is at the upper right when you hold reel on the left hand and you pull out the tape on the right hand 3000pcs TR 1pin (Unit : mm) HSON8 S 0.08 M 0.1 S 0.32±0.1 0.65 0.02 +0.03 –0.02 0.6MAX 8765 4 312 2.8±0.1 2.9±0.1 3.0±0.2 (MAX 3.1 include BURR) 0.475 1PIN MARK (0.2) (1.8) (0.15) (2.2) (0.3) (0.45) (0.2) (0.05) 0.13 +0.1 –0.05 Direction of feed Reel ∗ Order quantity needs to be multiple of the minimum quantity. <Tape and Reel information> Embossed carrier tapeTape Quantity Direction of feed The direction is the 1pin of product is at the upper right when you hold reel on the left hand and you pull out the tape on the right hand 3000pcs TR 1pin

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note www.rohm.com 2009.05 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. (Unit : mm) SON008V5060 0.08 S S 765 4 3 2 1 (0.22) C0.25 1PIN MARK +0.03 -0.020.02 0.59 0.4+0.05 -0.04 5.0±0.15 6.0±0.15 4.2±0.1 3.6±0.1 0.8±0.1 1.0MAX 1.27 ∗ Order quantity needs to be multiple of the minimum quantity. <Tape and Reel information> Embossed carrier tapeTape Quantity Direction of feed The direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand 2000pcs Direction of feed Reel 1pin

R0039Awww.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://www.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes N o c o p y i n g o r r e p r o d u c t i o n o f t h i s d o c u m e n t , i n p a rt o r i n w h o l e , i s p e r m i t t e d w i t h o u t t h e consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, commu- nication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. T h e P r o d u c t s a r e n o t d e s i g n e d o r m a n u f a c t u r e d t o b e u s e d w i t h a n y e q u i p m e n t , d e v i c e o r system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.

Summary

High-efficiency Step-down Switching Regulators with Built-in Power MOSFET

Description

ROHM’s high efficiency step-down switching regulator (BD9102FVM, BD9104FVM, BD9106FVM) is a power supply designed to produce a low voltage including 1.24 volts from 5 volts power supply line. Offers high efficiency with our original pulse skip control technology and synchronous rectifier. Employs a current mode control system to provide faster transient response to sudden change in load.

Source title BD9107FVM Datasheet(PDF) - Rohm

Read BD9107FVM online.