BD909 STMICROELECTRONICS | Alldatasheet

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COMPLEMENTARY SILICON POWER TRANSISTORS n STMicroelectronics PREFERRED SALESTYPES

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The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively. INTERNAL SCHEMATIC DIAGRAM October 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD909 BD911 PNP BD910 BD912 V CBO Collector-Base Voltage (IE = 0) 80 100 V V CEO Collector-Emitter Voltage (IB = 0) 80 100 V VEBO Emitter-Base Voltage (IC =0 ) 5 V IE ,IC Collector Current 15 A IB Base Current 5 A P tot Total Dissipation at Tc ≤ 25 oC 90 W Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C For PNP types voltage and current values are negative. TO-220

R thj-case Thermal Resistance Junction-case Max 1.4 oC/W ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE =0 ) forBD909/910 V CB =8 0V forBD911/912 V CB = 100 V Tcase =1 5 0oC forBD909/910 V CB =8 0V forBD911/912 V CB = 100 V 500 500 µ A µ A mA mA ICEO Collector Cut-off Current (IB =0 ) forBD909/910 V CE =4 0V forBD911/912 V CE =5 0V mA mA IEBO Emitter Cut-off Current (IC =0 ) V EB =5V 1 m A V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB =0 ) IC =1 0 0m A f o r BD909/910 forBD911/912 100 V V V CE(sat)∗ Collector-Emitter Saturation Voltage IC =5A I B =0 . 5A IC =1 0A I B =2 . 5A V V V BE(sat)∗ Base-Emitter Saturation Voltage IC =1 0A I B = 2.5 A 2.5 V V BE ∗ Base-Emitter Voltage I C =5A V CE =4V 1 . 5 V hFE ∗ DC Current Gain I C =0 . 5A V CE =4V IC =5A V CE =4V IC =1 0A V CE =4V 250 150 fT Transition frequency I C =0 . 5A V CE =4V 3 M H z ∗ Pulsed: Pulse duration = 300µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area Derating Curves BD909 / BD910 / BD911 / BD912

DC Current Gain (NPN type) DC Transconductance(NPN type) Collector-Emitter Saturation Voltage (NPN type) DC Current Gain (PNP type) DC Transconductance(PNP type) Collector-Emitter Saturation Voltage (PNP type) BD909 / BD910 / BD911 / BD912

Base-Emitter Saturation Voltage (NPN type) Transition Frequency (NPN type) Base-Emitter Saturation Voltage (PNP type) Transition Frequency (PNP type) BD909 / BD910 / BD911 / BD912

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 P011C TO-220 MECHANICAL DATA BD909 / BD910 / BD911 / BD912

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com BD909 / BD910 / BD911 / BD912