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www.rohm.com 2009.09 - Rev.C ○c 2009 ROHM Co., Ltd. All rights reserved. Single-chip Type with Built-in FET Switching Regulator Series High-efficiency Step-up/down Switching Regulator with Built-in Power MOSFET BD8301MUV

General Description ROHM’s highly-efficient step-up/down switching regulator BD8301MUV produces step-up/down output including 3.3 V from 1 cell of lithium battery with just one coil. This IC adopts an original step-up/down drive system and cr eates a higher efficient power supply than conventional Sepic-system or H-bridge system switching regulators.
Features 1) Highly-efficient step-up/down DC/DC converter to be constructed just with one inductor. 2) Input voltage 2.5 V - 5.5 V 3) Output current 1 A at 3.3 V 800 mA at 5.0 V 4) Incorporates soft-start function. 5) Incorporates timer latch system short protecting function. 6) High heat radiation surface mounted package VQFN020V4040
Application General portable equipment like portable audio or DSC/DVC
Absolute Maximum Ratings Parameter Symbol Ratings Unit Maximum applied power voltage Vcc,PVCC 7.0 V Maximum input current Iinmax 2.0 A Maximum input voltage Lx1 7.0 V Lx2 7.0 V Power dissipation Pd 700 mW Operating temperature range Topr -25 to +85 ºC Storage temperature range Tstg -55 to +150 ºC Junction temperature Tjmax 150 ºC
Operating Conditions (Ta = 25°C) Parameter Symbol Voltage range Unit Power supply voltage Vcc 2.5 to 5.5 V Output voltage OUT 2.8 to 5.2 V No.09027ECT07

Electrical Characteristics (Unless otherwise specified, Ta = 25 °C, VCC = 3.7 V) Parameter Symbol Target Value Unit Conditions Min Typ Max [Low voltage input malfunction preventing circuit] Detection threshold voltage VUV - 2.25 2.45 V Vcc monitor Hysteresis range ΔVUVhy 50 100 150 mV [Oscillator] Oscillation frequency fosc 0.8 1.0 1.2 MHz RT=47k Ω [Error AMP] INV threshold voltage VINV 0.790 0.800 0.810 V Input bias current IINV -50 0 50 nA Vcc=7.0V , VINV=3.5V Soft-start time Tss 0.6 1.00 1.4 msec RT=47k Ω Output source current IEO 10 20 30 μA VINV=0.5V , VFB =1.5V [PWM comparator] LX1 Max Duty Dmax1 - - 100 % LX2 Max Duty Dmax2 77 85 93 % [Output] LX1 PMOS ON resistance RON1p - 120 200 m Ω VGS=3.0V LX1 NMOS ON resistance RON1n - 100 160 mΩ VGS=3.0V LX2 PMOS ON resistance RON2p - 120 200 m Ω VGS=3.0V LX2 NMOS ON resistance RON2n - 100 160 mΩ VGS=3.0V LX1 leak current I leak1 -1 0 1 μA LX2 leak current I leak2 -1 0 1 μA [STB] STB pin ontrol voltage Operation VSTBH 1.5 - 5.5 V No-operation VSTBL -0.3 - 0.3 V STB pin pull-down resistance RSTB 250 400 700 k Ω [Circuit current] Standby current VCC pin ISTB1 - - 1 μA PVCC pin ISTB2 - - 1 μA VOUT pin ISTB3 - - 1 μA Circuit current at operation VCC Icc1 - 500 750 μA VINV=1.2V Circuit current at operation PVCC Icc2 - 10 20 μA VINV=1.2V

Description of Pins
Block Diagram Pin No. Pin Name Function

1 FB Error AMP output terminal

2 INV Error AMP input terminal

3～4 GND Ground terminal 5～6 V OUT Output voltage terminal 7～8 Lx2 Output side coil connecting terminal 9～12 PGND Power transistor ground terminal 13～14 Lx1 Input side coil connecting terminal 15～17 PVCC DC/DC converter input terminal

18 VCC Control part power supply input

19 STB ON/OFF terminal

20 RT Oscillation frequency set terminal

q GND VREF ERROR_AMP Soft Start VOUT LX2 OSC STBY_IO TIMMING CONTROL TIMMING CONTROL PRE DRIVER PRE DRIVER PRE DRIVER PRE DRIVER INV FB VREF RT SCP 16000 ｃount FB H STOP Fig.1 Pin layout Fig.2 Block diagram

Description of Blocks 1.VREF This block generates ERROR AMP reference voltage. The reference voltage is 0.8 V. 2.UVLO Circuit for preventing low voltage malfunction Prevents malfunction of the internal circuit at activation of the power supply voltage or at low power supply voltage. Monitors VCC pin voltage to turn off all output FET and DC/DC converter output when VCC voltage is lower than 2.2 V, and reset the timer latch of the internal SCP circuit and soft-start circuit. 3.SCP Timer latch system short-circuit protection circuit When the INV pin is the set 0.8 V or lower voltage, the internal SCP circuit starts counting. The internal counter is in synch with OSC; the latch circuit activates after the counter counts about 16000 oscillations to turn off DC/DC converter output (about 16 msec when RT = 47kΩ). To reset the latch circuit, turn off the STB pin once. Then, turn it on again or turn on the power supply voltage again. 4.OSC Oscillation circuit to change frequency by external resistance of the RT pin (20 pin). When RT = 47 kΩ, operation frequency is set at 1 MHz. 5.ERROR AMP Error amplifier for detecting output signals and output PWM control signals The internal reference voltage is set at 0.8 V. 6.PWM COMP Voltage-pulse width converter for controlling output voltage corresponding to input voltage Comparing the internal SLOPE waveform with the ERROR AMP output voltage, PWM COMP controls the pulse width and outputs to the driver. Max Duty and Min Duty are set at the primary side and the secondary side of the inductor respectively, which are as follows: Primary side (Lx1) Max Duty : 100 %, Min Duty : 0 % Secondary side (Lx2) Max Duty : 100 %, Min Duty : About 15 % 7.SOFT START Circuit for preventing in-rush current at startup by bringing the output voltage of the DC/DC converter into a soft-start Soft-start time is in synch with the internal OSC, and the output voltage of the DC/DC converter reaches the set voltage after about 1000 oscillations (About 1 msec when RT = 47 kΩ). 8.PRE DRIVER CMOS inverter circuit for driving the built-in Pch/Nch FET Dead time is provided for preventing feedthrough during switching. The dead time is set at about 15 nsec for each individual SWs. 9. STBY_IO Voltage applied on STB pin (19 pin) to control ON/OFF of IC Turned ON when a voltage of 1.5 V or higher is applied and turned OFF when the terminal is open or 0 V is applied. Incorporates approximately 400 kΩ pull-down resistance. 10. Pch/Nch FET SW Built-in SW for switching the coil current of the DC/DC converter. Pch FET is about 120 mΩ and Nch is 100 mΩ. Since the current rating of this FET is 2 A, it should be used within 2 A in total including the DC current and ripple current of the coil.

Reference Data (Unless otherwise specified, Ta = 25°C, VCC = 3.7 V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 012 34 FB VOLTAGE [V] FB SINK CURRENT [mA] INV=1.1V -40 -35 -30 -25 -20 -15 -10 FB VOLTAGE [V] FB SOURCE CURRENT [uA] INV=0.5V 0.790 0.795 0.800 0.805 0.810 -50 0 50 100 150 TEMPERATURE [℃] INV THRESHOLD [V] VCC=2.4V VCC=3.7V VCC=5.5V VCC=7.0V 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 -50 0 50 100 150 TEMPARATURE [℃] UVLO THRESHOLD [V] DETECT RESET 0.790 0.795 0.800 0.805 0.810 VCC [V] INV THRESHOLD [V] UVLO 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50 0 50 100 150 TEMPERATURE [℃] FREQUENCY [MHz] 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 23456 VCC [℃] FREQUENCY [MHz] 100 150 200 250 300 -60 -10 40 90 140 TEMPERATURE [℃] ON RESISTANCE [mΩ] VCC=2.0V VCC=3.0V VCC=3.7V VCC=6.0V Fig.3 INV threshold Fig.8 FB sink current Fig.9 FB source current Fig.5 Oscillation frequency Fig.7 UVLO threshold Fig.4. INV threshold (power supply property) Fig.11 Lx1 Nch FET ON resistance Fig.6 Oscillation frequency (power supply property) Fig.10 Lx1 Pch FET ON resistance 100 150 200 250 300 -60 -10 40 90 140 TEMPERATURE [℃] ON RESISTANCE [mΩ] VCC=2.0V VCC=3.0V VCC=3.7V VCC=6.0V Io=500mA Io=500mA

www.rohm.com 2009.09 - Rev.C ○c 2009 ROHM Co., Ltd. All rights reserved. Fig.12 Lx2 Pch FET ON resistance Fig.13 Lx2 Nch FET ON resistance 100 150 200 250 300 -60 -10 40 90 140 TEMPERATURE [℃] ON RESISTANCE [mΩ] VCC=2.0V VCC=3.0V VCC=3.7V VCC=6.0V Io=500mA 100 150 200 250 300 -60 -10 40 90 140 TEMPERATURE [℃] ON RESISTANCE [mΩ] VCC=2.0V VCC=3.0V VCC=3.7V VCC=6.0V Io=500mA 200 400 600 800 1000 01234567 VCC VOLTAGE [V] VCC CURRENT [uA] INV=1.1V 01234567 PVCC VOLTAGE [V] PVCC CURRENT [uA] INV=1.1V 01234567 VOUT VOLTAGE [V] VOUT CURRENT [uA] INV=1.1V Fig.14 VCC input current Fig.15 PVCC input current Fig.16 VOUT input current

Example of Application Input: 2.8 to 5.5 V, output: 3.3 V / 1.0 A, frequency 600 kHz
Example of Board Layout VOUT VBAT GND GND L CC RC RFB CFB VOUT RINV1 1pin RT RVCC CVCC CVOUT Lx2 CVIN VCC RINV2 Lx1 PGND 1112131415 54321 PVCC PVCC VCC STB RT VOUT Lx2 Lx2 PGND FB INV GND GND VOUT PGND PGND PGND Lx1 Lx1 PVCC ON/OFF 3.3V/1.0A 2.8～5.5V 10uF(ceramic) murata GRM31CB11A106KA01 4.7uH TOKO DE3518C 10uF(ceramic) murata GRM31CB11A106KA01 RVIN CVCC 1uF 82k CFB 1500p RFB 7.5k RINV1 75k RINV2 24k CC 150p RC 5.1k Fig.17 Example of Application Fig.18 Example of Board Layout

Reference Application Data
Selection of Parts for Applications (1) Output inductor A shielded inductor that satisfies the current rating (current value, Ipeak as shown in the drawing below) and has a low DCR (direct current resistance component) is recommended. Inductor values affect output ripple current greatly. Ripple current can be reduced as the coil L value becomes larger and the switching frequency becomes higher as the equations shown below. Ipeak =Iout ×(Vout/VIN) /η+ ∆IL/2 [A] (1) (η: Efficiency, ∆IL: Output ripple current, f: Switching frequency) As a guide, output ripple current should be set at about 20 to 50% of the maximum output current. * Current over the coil rating flowing in the coil brings the coil into magnetic saturation, which may lead to lower efficiency or output oscillation. Select an inductor with an adequate margin so that the peak current does not exceed the rated current of the coil. ΔIL ⊿I L = × × [A] (in step-down mode) (2) L (Vin-Vout) Vin Vout f ⊿I L = × × [ A ] ( i n s t e p - u p / d o w n m o d e ) (3) L |(Vin-Vout)| f ⊿I L = × × [A] (in step-up mode) (4) (Vin+Vout) Vout×2×0.85 L (Vout-Vin) Vout Vin f Fig. 22 Ripple current 3.27 3.28 3.29 3.30 3.31 3.32 3.33 INPUT VOLTAGE [V] OUTPUT VOLTAGE [V] Io=600mA 3.27 3.28 3.29 3.30 3.31 3.32 3.33 1 10 100 1000 OUTPUT CURRENT [mA] OUTPUT VOLTAGE [V] VBAT=3.7V Fig.19 Power conversion efficiency Fig.20 Line regulation Fig.21 Load regulation 100 1 10 100 1000 OUTPUT CURRENT [mA] EF FIC IENC Y [%] VBAT=2.8V VBAT=3.7V VBAT=4.2V

www.rohm.com 2009.09 - Rev.C ○c 2009 ROHM Co., Ltd. All rights reserved. (2) Output capacitor A ceramic capacitor with low ESR is recommended for output in order to reduce output ripple. There must be an adequate margin between the maximum rating and output voltage of the capacitor, taking the DC bias property into consideration. Output ripple voltage when ceramic capacitor is used is obtained by the following equation. Setting must be performed so that output ripple is within the allowable ripple voltage. (3) Setting of oscillation frequency Oscillation frequency can be set using a resistance value connected to the RT pin (1 pin). Oscillation frequency is set at 1 MHz when RT = 47 kΩ, and frequency is inversely proportional to RT value. See Fig. 23 for the relationship between RT and frequency. Soft-start time changes along with oscillation frequency. See Fig. 24 for the relationship between RT and soft-start time. * Note that the above example of frequency setting is just a design target value, and may differ from the actual equipment. (4) Output voltage setting The internal reference voltage of the ERROR AMP is 0.8 V. Output voltage should be obtained by referring to Equation (8) of Fig. 25. VREF 0.8V VOUT ERROR AMPR1 INV (R1+R2) 2π×f×Co 100 1000 10000 1 10 100 1000 RT PIN RESISTANCE [kΩ] SWITCHNG FREQUENCY [kHz] Fig. 23 Oscillation frequency – RT pin resistance 0.1 1 10 100 1000 RT PIN RESISTANCE [kΩ] SOFT START TIME [msec] Fig. 24 Soft-start time – RT pin resistance Fig. 25 Setting of feedback resistance

www.rohm.com 2009.09 - Rev.C ○c 2009 ROHM Co., Ltd. All rights reserved. (5) Determination of phase compensation Condition for stable application The condition for feedback system stability under negative feedback is as follows: - Phase delay is 135 °or less when gain is 1 (0 dB) (Phase margin is 45° or higher) Since DC/DC converter application is sampled according to the switching frequency, the GBW of the whole system (frequency at which gain is 0 dB) must be set to be equal to or lower than 1/5 of the switching frequency. In summary, target property of applications is as follows: - Phase delay must be 135°or lower when gain is 1 (0 dB) (Phase margin is 45° or higher). - The GBW at that time (frequency when gain is 0 dB) must be equal to or lower than 1/5 of the switching frequency. For this reason, switching frequency must be increased to improve responsiveness. One of the points to secure stability by phase compensation is to cancel secondary phase delay (-180°) generated by LC resonance by the secondary phase lead (i.e. put two phase leads). Since GBW is determined by the phase compensation capacitor attached to the error amplifier, when it is necessary to reduce GBW, the capacitor should be made larger. Phase compensation when output capacitor with low ESR such as ceramic capacitor is used is as follows: When output capacitor with low ESR (several tens of mΩ) is used for output, secondary phase lead (two phase leads) must be put to cancel secondary phase lead caused by LC. One of the examples of phase compensation methods is as follows: For setting of phase-lead frequency, both of them should be put near LC resonance frequency. When GBW frequency becomes too high due to the secondary phase lead, it may get stabilized by setting the primary phase delay to a frequency slightly higher than the LC resonance frequency by R3 to compensate it. -180° -90° (A) Phase margin GAIN [dB] PHASE [degree] -20dB/decade A Error AMP is a low-pass filter because phase compensation such as (1) and (2) is performed. For DC/DC converter application, R is a parallel feedback resistance. Fig.27 Frequency property of integrator Fig.26 General integrator FB R C Point (A) f p = [ H z ] ( 9 ) 2πR1C1 Phase lead fz2 = [Hz] (12) P h a s e d e l a y f p 1 = [ H z ] ( 1 3 ) 2πR4C2 2πR3C1 LC resonance frequency = [Hz] (14) 2π√(LC) FB VOUT C2 R1 R4C1 (B) Point (B) fGBW= [ H z ] ( 1 0 ) Phase lead fz1 = [Hz] (11) 2πRCA 2πRC Fig.28 Example of setting of phase compensation

I/O Equivalence Circuit FB INV VOUT,Lx2,PGND PVCC,Lx1,PGND VCC VCC FB VOUT Lx2 PGND VCC PVCC Lx1 PGND VCC VCCVCC INV Fig.29 I/O Equivalence Circuit STB RT VCC STB RT VCC VCC

Precautions for Use 1) Absolute Maximum Rating We dedicate much attention to the quality control of these products, however the possibility of deterioration or destruction exists if the impressed voltage, operating temperature range, etc., exceed the absolute maximum ratings. In addition, it is impossible to predict all destructive situations such as short-circuit modes, open circuit modes, etc. If a special mode exceeding the absolute maximum rating is expected, please review matters and provide physical safety means such as fuses, etc. 2) GND Potential Keep the potential of the GND pin below the minimum potential at all times. 3) Thermal Design Work out the thermal design with sufficient margin taking power dissipation (Pd) in the actual operation condition into account. 4) Short Circuit between Pins and Incorrect Mounting Attention to IC direction or displacement is required when installing the IC on a PCB. If the IC is installed in the wrong way, it may break. Also, the threat of destruction from short-circuits exists if foreign matter invades between outputs or the output and GND of the power supply. 5) Operation under Strong Electromagnetic Field Be careful of possible malfunctions under strong electromagnetic fields. 6) Common Impedance When providing a power supply and GND wirings, show sufficient consideration for lowering common impedance and reducing ripple (i.e., using thick short wiring, cutting ripple down by LC, etc.) as much as you can. 7) Thermal Protection Circuit (TSD Circuit) This IC contains a thermal protection circuit (TSD circuit). The TSD circuit serves to shut off the IC from thermal runaway and does not aim to protect or assure operation of the IC itself. Therefore, do not use the TSD circuit for continuous use or operation after the circuit has tripped. 8) Rush Current at the Time of Power Activation Be careful of the power supply coupling capacity and the width of the power supply and GND pattern wiring and routing since rush current flows instantaneously at the time of power activation in the case of CMOS IC or ICs with multiple power supplies. 9) IC Terminal Input This is a monolithic IC and has P+ isolation and a P substrate for element isolation between each element. P-N junctions are formed and various parasitic elements are configured using these P layers and N layers of the individual elements. For example, if a resistor and transistor are connected to a terminal as shown on Fig.30: ○The P-N junction operates as a parasitic diode when GND > (Terminal A) in the case of a resistor or when GND > (Pin B) in the case of a transistor (NPN) ○Also, a parasitic NPN transistor operates using the N layer of another element adjacent to the previous diode in the case of a transistor (NPN) when GND > (Pin B). The parasitic element consequently rises under the potential relationship because of the IC’s structure. The parasitic element pulls interference that could cause malfunctions or destruction out of the circuit. Therefore, use caution to avoid the operation of parasitic elements caused by applying voltage to an input terminal lower than the GND (P board), etc. ～～ (Pin A) GND P Substrate N P N P+ P+ (Pin A) Parasitic Element Resistor Transistor (NPN) ～～ GND N P N N P+P+ (Pin B) B N E C GND N P Substrate Parasitic Element Parasitic Element Fig.30 Example of simple structure of Bipolar IC

Ordering part number B D 8 3 0 1 M U V - E 2 Part No. Part No. Package MUV: VQFN020V4040 Packaging and forming specification E2: Embossed tape and reel ∗ Order quantity needs to be multiple of the minimum quantity. <Tape and Reel information> Embossed carrier tapeTape Quantity Direction of feed The direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand 2500pcs Direction of feed Reel 1pin (Unit : mm) VQFN020V4040 2.1±0.1 15 11 0.5 1.0 0.25 +0.05 -0.04 2.1±0.1 0.4±0.1 C0.2 1.0MAX 0.02 +0.03 -0.02 (0.22) 4.0±0.1 4.0±0.1 1PIN MARK 0.08 S S

R0039Awww.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://www.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes N o c o p y i n g o r r e p r o d u c t i o n o f t h i s d o c u m e n t , i n p a rt o r i n w h o l e , i s p e r m i t t e d w i t h o u t t h e consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, commu- nication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. T h e P r o d u c t s a r e n o t d e s i g n e d o r m a n u f a c t u r e d t o b e u s e d w i t h a n y e q u i p m e n t , d e v i c e o r system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.

Product Information

BD8301MUV specifications and overview.

Summary

High-effciency Step-up/down Switching Regulator with Built-in Power MOSFET

Description

High-effciency Step-up/down Switching Regulator with Built-in Power MOSFET

Source title BD8301MUV Datasheet(PDF) - Rohm

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