BD795 INTERSIL | Alldatasheet
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3875081 GE SOLID STATE —_ O1E 17554 D 7-33-//
~ ————— ro Electron Power Transistors TSEyaQal * . File Number 1242 BD795, BD796, BD797, BD798, BD799, BD800, BD801, BD802 Epitaxial-Base, Silicon « N-P-N and P-N-P ‘TERMINAL DESIGNATIONS . VERSAWATT Transistors = € ¢ ——— General-Purpose Medium-Power Types for (ance) —————= ; Switching and Amplifier Applications a Features: Tor view ° = Low saturation voltages : mess = Complomentary n-p-n and p-n-p types JEDEC TO-220AB =| Maximum safe-area-ol-operation curves The RCA-8D795, 80797, BD799, and BD801 n-p-n transis- tors and their p-n-p complements 80796, BD798, 80800, and BD802, respectively, are epitaxial-base silicon types intended for a wide variety of medium-power switching and amplifier applications, such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. These transistors are supplied in the JEDEC TO-220AB . (VERSAWATT) plastic package. N-P-N BD795 80797 BO799 BD801 ‘P-N-P BD796¢ BD796¢ BDs00¢ BD802¢ VCGO vise ee eteneeeeeneenanenseeeennneeeneeene 45 60 80 100 v Ta ceteceeeneneeeeeeeeeeneueeeenenenaeaeeeeens ee A Py - Tag Ty seesevereceeeeeeesseeseeeeeeeeneesees 850 150 8 un At distances > 1/8 in. (3.17 mm) from. Case fOr 105 MAX. «0... esse eeeeeeeeeeeeeee ——— 25 *For p-n-p devices, voltage and current values are negative. —SSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSe $59
1097 A-14
3875081 G E SOLID STATE O1E 17555 _ T 33-1)
: Pro Electron Power Transistors. ZS / —— TT “2 - BD795, BD796, BD797, BD798, . . BD799, BD800, BD801, BD802 ELECTRICAL CHARACTERISTICS, at Case Temperature (To) = 25°C Unless Otherwise Specified Rs [Test CONDITIONS Tums b Vdc Adc BO796 © D798 © , [von] Vor [vee] tc | te | tn | mex. | tan] ma. ee fat TT fey eter ay mA : leo esto =r [Moe ote Tas = Pot poco Tet Pat pepe t tel [Wcewa) TT se fos rT [_fsiwke [To [foes fs Ps TF ee | [Rac = 82 [= J 82 [ow ® Pulsed; Pulse duration = 300 ys, duty factor = 1.8%. > CAUTION: The sustaining voltage Vegq(sus) MUST NOT be measured on a curve tracer. © For p-n-p devices, voltage and current values are negative. es EEHEEEEE EEE EEE EEE SESE EE ie Fpomistadasusiedsabassuiessassestasbabisstieel| Re ose LL be LPN \\ | {CESESSRESSH TS nS SETH ¥ eet es TIN verte ee TEE TEETH) Stor ttt ORS ¢ “HETHHH PR Pre Se HEH ie leer CESS) | EEE SST ESTHET Be Ee steGieiesenny SCguHERRL-SeRHESHEHHHEEE 5 CT] INQ pSSSESESEasaseey oNCGises asrEacaeeeaitessasa| e 4 Fig. 1—Current derating curves for all types. Fig. 2—Normalized de-beta characteristics for all types. : [esse regener verre TTT TT bt | TT Pr Tt F LT Ty Ty Tp Rete ir A : LE | ZI : ow} 1 La i seeatil TA Ps cote Ct PE] Ci Te pa . al COLLECTOR CURRENT EgI=A 9208-32706 Fig, 3—Typical "on" voltage characteristics . for all types. 560 . 1098 B-OL .
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3875081 GE SOLID STATE ®Ot€ 17556 0 TSa"I|
é Pro Electron Power Transistors we . . BD795, BD796, BD797, BD798, BD799, BD800, BD801, BD802 oo ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25°C T.3S-A/ Unless Otherwise Specified [___test conoiions OT uimits . VOLTAGE ‘CURRENT B0799 BD8O1 cL) -
100 On mA
[MceoP eo eo = oo =) peep ff Se [Veewa) TT fos a [tte imre To poss = st | [Rac TT ee = eo] *® Pulsed; Pulse duration = 300 us, duty factor = 1.8%. » CAUTION: The sustaining voltage Vogg(sus) MUST NOT be measured on a curve tracer. © For p-n-p devices, voltage and current values are negative, TOO | CASE TEMPERATURE Tc] 25°C Ei STEN EE aS ETH Fe et Eee cei eae ee SU aE S _FHEIE) oc operarion SQ creas iii mpttiineeeni|itit ere Benes HAR SN ea RS ee Bese Vego (MAX) + 100V( 80 801, 802) Basa aaa HEE tiitt cet tittitess tH} cr aT i Fe ee ee COLLECTOR-TO-EMITTER VOLTAGE Vgel=V sacu-ser9e Fig. 4 — Maximum operating areas forall types SSS 1