BD791 ONSEMI | Alldatasheet

Document overview

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Technical content

  • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min)
  • High DC Current Gain @ IC = 200 mAdc hFE = 40–250
  • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc
  • High Current Gain — Bandwidth Product — fT = 40 MHz (Min) @ IC = 100 mAdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Rating ÎÎÎÎÎ ÎÎÎÎÎ Symbol ÎÎÎÎÎÎ ÎÎÎÎÎÎ Max ÎÎÎ ÎÎÎ Unit ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage ÎÎÎÎÎ ÎÎÎÎÎ VCEO ÎÎÎÎÎÎ ÎÎÎÎÎÎ 100 ÎÎÎ ÎÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage ÎÎÎÎÎ ÎÎÎÎÎ VCB ÎÎÎÎÎÎ ÎÎÎÎÎÎ 100 ÎÎÎ ÎÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage ÎÎÎÎÎ ÎÎÎÎÎ VEBO ÎÎÎÎÎÎ ÎÎÎÎÎÎ 6.0 ÎÎÎ ÎÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous — Peak ÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎ IC ÎÎÎÎÎÎ Î ÎÎÎÎ Î ÎÎÎÎÎÎ 4.0 8.0 ÎÎÎ Î Î Î ÎÎÎ Adc ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Base Current ÎÎÎÎÎ ÎÎÎÎÎ IB ÎÎÎÎÎÎ ÎÎÎÎÎÎ 1.0 ÎÎÎ ÎÎÎ Adc ÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25/C0095C Derate above 25/C0095C ÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎ PD ÎÎÎÎÎÎ Î ÎÎÎÎ Î ÎÎÎÎÎÎ 0.12 ÎÎÎ Î Î Î ÎÎÎ Watts W//C0095C ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction Temperature Range ÎÎÎÎÎ ÎÎÎÎÎ TJ,Tstg ÎÎÎÎÎÎ ÎÎÎÎÎÎ –65 to +150 ÎÎÎ ÎÎÎ /C0095C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic ÎÎÎÎÎ ÎÎÎÎÎ Symbol ÎÎÎÎÎÎ ÎÎÎÎÎÎ Max ÎÎÎ ÎÎÎ Unit ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case ÎÎÎÎÎ ÎÎÎÎÎ R θJC ÎÎÎÎÎÎ ÎÎÎÎÎÎ 8.34 ÎÎÎ ÎÎÎ /C0095C/W 20 40 60 100 120 140 160

Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value.

4 AMPERE

100 VOLTS

15 WATTS

2 Motorola Bipolar Power Transistor Device Data

  • Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width /C0118 300 µs, Duty Cycle /C0118 2.0%. Figure 2. Switching Time Test Circuit Figure 3. Turn–On Time FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.

4 Motorola Bipolar Power Transistor Device Data

Figure 8. DC Current Gain Figure 9. “On” Voltage Figure 10. Temperature Coefficient

/C0066/C0068/C0055/C0057/C0049 5Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS CASE 77–09 TO–225AA TYPE ISSUE W STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. –B– –A– M K F C Q H V G S D J R U 13 2 2 PL MAM0.25 (0.010) B M MAM0.25 (0.010) B M DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66 F 0.115 0.130 2.93 3.30 G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63 M 5 TYP 5 TYP Q 0.148 0.158 3.76 4.01 R 0.045 0.065 1.15 1.65 S 0.025 0.035 0.64 0.88 U 0.145 0.155 3.69 3.93 /C0095/C0095

/C0066/C0068/C0055/C0057/C0049

6 Motorola Bipolar Power Transistor Device Data

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