BD746 BOURNS | Alldatasheet

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BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS /g80 /g82/g79 /g68 /g85/g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 1AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

  • Designed for Complementary Use with the BD745 Series
  • 115 W at 25°C Case Temperature
  • 20 A Continuous Collector Current
  • 25 A Peak Collector Current
  • Customer-Specified Selections Available absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. This value applies for t p ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I B(on) = -0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) BD746 BD746A BD746B BD746C V CBO -50 -70 -90 -110 V Collector-emitter voltage (I B = 0) BD746 BD746A BD746B BD746C V CEO -45 -60 -80 -100 V Emitter-base voltage V EBO -5 V Continuous collector current IC -20 A Peak collector current (see Note 1) I CM -25 A Continuous base current IB -7 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P tot 115 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P tot 3.5 W Unclamped inductive load energy (see Note 4) ½LI C 2 90 mJ Operating free air temperature range T A -65 to +150 °C Operating junction temperature range T j -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm from case for 10 seconds T L 260 °C SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAAA B C E

BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS /g80/g82/g79/g68/g85 /g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 5. These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = -30 mA I B = 0 (see Note 5) BD746 BD746A BD746B BD746C -45 -60 -80 -100 V I CBO Collector cut-off current VCE = - 5 0 V VCE = - 7 0 V VCE = - 9 0 V VCE = -110 V VCE = - 5 0 V VCE = - 7 0 V VCE = - 9 0 V VCE = -110 V VBE =0 VBE =0 VBE =0 VBE =0 VBE =0 VBE =0 VBE =0 VBE =0 TC = 125°C TC = 125°C TC = 125°C TC = 125°C BD746 BD746A BD746B BD746C BD746 BD746A BD746B BD746C -0.1 -0.1 -0.1 -0.1 mA I CEO Collector cut-off current VCE = - 3 0 V VCE = -60 V IB =0 IB =0 BD746/746A BD746B/746C -0.1 -0.1 mA IEBO Emitter cut-off current VEB = -5 V I C =0 - 0 . 5 m A hFE Forward current transfer ratio VCE = -4 V VCE = -4 V VCE = -4 V IC = - 1A IC = - 5A IC =- 2 0A (see Notes 5 and 6) 150 VCE(sat) Collector-emitter saturation voltage IB = -0.5 A IB = -5 A IC = - 5A IC = -20 A (see Notes 5 and 6) -1 -3 V VBE Base-emitter voltage VCE = -4 V VCE = -4 V IC = - 5 A IC =- 2 0 A (see Notes 5 and 6) -1 -3 V hfe Small signal forward current transfer ratio VCE = -10 V I C = - 1A f = 1 k H z 2 5 |hfe| Small signal forward current transfer ratio VCE = -10 V I C = - 1A f = 1 M H z 5 thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.1 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT td Delay time IC = -5 A VBE(off) = 4.2 V IB(on) = -0.5 A RL = 6 Ω IB(off) = 0.5 A tp = 20 µs, dc ≤ 2% 20 ns tr Rise time 120 ns ts Storage time 600 ns tf Fall time 300 ns

BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS /g80/g82/g79/g68/g85 /g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. THERMAL INFORMATION Figure 4. MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TC - Case Temperature - °C 0 25 50 75 100 125 150 Ptot - Maximum Power Dissipation - W 100 120 TIS635AB

BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS /g80 /g82/g79 /g68 /g85/g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. SOT -93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound w ill withstand soldering temperature with no defor mation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. MECHANICAL DATA SOT-93 ALL LINEAR DIMENSIONS IN MILLIMETERS 4,90 4,70 1,37 1,17 0,78 0,50 2,50 TYP. 15,2 14,7 12,2 MAX. 16,2 MAX. 18,0 TYP. 31,0 TYP. 1,30 1,10 11,1 10,8 4,1 4,0 3,95 4,15 1 2 3 NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW ø