BD707 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
COMPLEMENTARY SILICON POWER TRANSISTORS n COMPLEMENTARY PNP - NPN DEVICES APPLICATION n LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
DESCRIPTION
The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The BD707 and BD711 complementary PNP types are BD708 and BD712 respectively. INTERNAL SCHEMATIC DIAGRAM September 1999 TO-220 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD707 BD709 BD711 PNP BD708 BD712 V CBO Collector-Base Voltage (IE =0 ) 6 0 8 0 1 0 0 V VCER Collector-Emitter Voltage (VBE =0 ) 6 0 8 0 1 0 0 V V CEO Collector-Emitter Voltage (IB =0 ) 6 0 8 0 1 0 0 V VEBO Emitter-Base Voltage (IC =0 ) 5 V IC Collector Current 12 A ICM Collector Peak Current 18 A IB Base Current 5 A P tot Total Dissipation at Tc ≤ 25 oC 75 W Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C For PNP types voltage and current values are negative
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.67 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE =0 ) forBD707/708 V CB =6 0V forBD709 V CB =8 0V forBD711/712 V CB = 100 V Tcase =1 5 0oC forBD707/708 V CB =6 0V forBD709 V CB =8 0V forBD711/712 V CB = 100 V 100 100 100 µ A µ A µ A mA mA mA I CEO Collector Cut-off Current (IB =0 ) forBD707/708 V CE =3 0V forBD709 V CE =4 0V forBD711/712 V CE =5 0V 100 100 100 mA mA mA IEBO Emitter Cut-off Current (IC =0 ) V EB =5V 1 m A V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB =0 ) IC =1 0 0m A forBD707/708 forBD709 forBD711/712 100 V V V V CE(sat)∗ Collector-Emitter Saturation Voltage IC =4A I B =0 . 4A 1 V V CEK ∗ Knee Voltage I C =3A I B =* * 0 . 4 V V BE ∗ Base-Emitter Voltage I C =4A V CE =4V 1 . 5 V hFE ∗ DC Current Gain I C =0 . 5A V CE =2V IC =2A V CE =2V forBD707/708 forBD709 IC =4A V CE =4V IC =1 0A V CE =4V forBD707/708 forBD709 forBD711/712 120 400 150 f T Transition frequency I C =3 0 0m A V CE =3V 3 M H z ∗ Pulsed: Pulse duration = 300µs, duty cycle 1.5 % ** Value for which IC = 3.3 A at VCE = 2V. For PNP types voltage and current values are negative. BD707/708/709/711/712
DC Current Gain(NPN type) DC Transconductance(NPNtype) Derating Curve DC Current Gain(PNP type) DC Transconductance(PNPtype) BD707/708/709/711/712
Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) Transition Frequency (NPN type) Transition Frequency (PNP type) BD707/708/709/711/712
DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 P011C TO-220 MECHANICAL DATA BD707/708/709/711/712
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com BD707/708/709/711/712