BD649F ISC | Alldatasheet
Document overview
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNDarlingtonPowerTransistor BD649F
DESCRIPTION
- HighDCCurrentGain
- LowSaturation Voltage
- ComplementtoType BD650F
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforuseas complementaryAFpush-pulloutput stageapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 120 V VCEO Collector-EmitterVoltage 100 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 8 A ICP CollectorCurrent-Peak 12 A IB BaseCurrent-Continuous 0.15 A PC CollectorPowerDissipation @Ta=25℃ 20 W CollectorPowerDissipation @TC=25℃ 32 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.6 ℃/W Rthj-a ThermalResistance,JunctiontoAmbient 6.25 ℃/W
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNDarlingtonPowerTransistor BD649F ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterBreakdownVoltage IC=30mA;IB=0 100 V VCE(sat)-1 Collector-EmitterSaturationVoltage IC=3A;IB=12mA 2.0 V VCE(sat)-2 Collector-EmitterSaturationVoltage IC=5A;IB=50mA 2.5 V VBE(sat) Base-EmitterSaturationVoltage IC=5A;IB=50mA 3.0 V VBE(on) Base-EmitterOnVoltage IC=3A;VCE=3V 2.5 V ICBO CollectorCutoffCurrent VCB=120V;IE=0 0.1 mA VCB=60V;IE=0;TC=150℃ 1.0 ICEO CollectorCutoffCurrent VCE=50V;IB=0 0.2 mA IEBO EmitterCutoffCurrent VEB=5V;IC=0 5 mA hFE-1 DCCurrentGain IC=0.5A;VCE=3V 1900 hFE-2 DCCurrentGain IC=3A;VCE=3V 750 hFE-3 DCCurrentGain IC=8A;VCE=3V 1800