BD649-S BOURNS | Alldatasheet

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BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS /g80 /g82/g79 /g68 /g85/g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 1MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

  • Designed for Complementary Use with BD646, BD648, BD650 and BD652
  • 62.5 W at 25°C Case Temperature
  • 8 A Continuous Collector Current
  • Minimum hFE of 750 at 3 V, 3 A absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. This value applies for t p ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I B(on) = 5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V . RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) BD645 BD647 BD649 BD651 V CBO 100 120 140 V Collector-emitter voltage (I B = 0) BD645 BD647 BD649 BD651 V CEO 100 120 V Emitter-base voltage V EBO 5V Continuous collector current IC 8A Peak collector current (see Note 1) I CM 12 A Continuous base current IB 0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P tot 62.5 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P tot 2W Unclamped inductive load energy (see Note 4) ½LI C 2 50 mJ Operating junction temperature range T j -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm from case for 10 seconds T L 260 °C B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA

BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS /g80/g82/g79/g68/g85 /g67/g84 /g73/g78/g70/g79/g82/g77/g65 /g84/g73/g79/g78 MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 5. These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA I B = 0 (see Note 5) BD645 BD647 BD649 BD651 100 120 V I CEO Collector-emitter cut-off current VCE = 3 0 V VCE = 4 0 V VCE = 5 0 V VCE = 6 0 V IB =0 IB =0 IB =0 IB =0 BD645 BD647 BD649 BD651 0.5 0.5 0.5 0.5 mA I CBO Collector cut-off current VCB = 6 0 V VCB = 80 V VCB = 100 V VCB = 120 V VCB = 4 0 V VCB = 50 V VCB = 60 V VCB = 70 V IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 TC = 150°C TC = 150°C TC = 150°C TC = 150°C BD645 BD647 BD649 BD651 BD645 BD647 BD649 BD651 0.2 0.2 0.2 0.2 2.0 2.0 2.0 2.0 mA I EBO Emitter cut-off current VEB = 5 V I C = 0 (see Notes 5 and 6) 5 mA hFE Forward current transfer ratio VCE = 3 V I C = 3 A (see Notes 5 and 6) 750 VCE(sat) Collector-emitter saturation voltage IB = 12 mA IB = 50 mA IC = 3A IC = 5A (see Notes 5 and 6) 2 2.5 V VBE(sat) Base-emitter saturation voltage IB = 50 mA I C = 5 A (see Notes 5 and 6) 3 V VBE(on) Base-emitter voltage VCE = 3 V I C = 3 A (see Notes 5 and 6) 2.5 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 2.0 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W