BD649 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD649
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 100V(Min)
- High DC Current Gain : h FE= 750(Min) @IC= 3A
- Low Saturation Voltage
- Complement to Type BD650
APPLICATIONS
- Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB B Base Current-Continuous 0.3 A Collector Power Dissipation @ Ta=25℃ 2 PC Collector Power Dissipation @ TC=25℃ 62.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD649
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA B 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA B 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA B 3.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V VCB= 100V; IE= 0 0.2 ICBO Collector Cutoff Current VCB= 60V; IE= 0; TC= 150℃ 2.0 mA ICEO Collector Cutoff Current VCE= 50V; IB= 0 B 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE DC Current Gain IC= 3A ; VCE= 3V 750 isc Website：www.iscsemi.cn 2