BD646F ISC | Alldatasheet
Document overview
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPDarlingtonPowerTransistor BD646F
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=-60V(Min)
- HighDCCurrentGain
- LowSaturation Voltage
- ComplementtoType BD645F
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforuseas complementaryAFpush-pulloutput stageapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -60 V VCEO Collector-EmitterVoltage -60 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -8 A ICP CollectorCurrent-Peak -12 A IB BaseCurrent-Continuous -0.15 A PC CollectorPowerDissipation @Ta=25℃ 20 W CollectorPowerDissipation @TC=25℃ 32 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.6 ℃/W Rthj-a ThermalResistance,JunctiontoAmbient 6.3 ℃/W
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPDarlingtonPowerTransistor BD646F ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterBreakdownVoltage IC=-30mA;IB=0 -60 V VCE(sat)-1 Collector-EmitterSaturationVoltage IC=-3A;IB=-12mA -2.0 V VCE(sat)-2 Collector-EmitterSaturationVoltage IC=-5A;IB=-50mA -2.5 V VBE(sat) Base-EmitterSaturationVoltage IC=-5A;IB=-50mA -3.0 V VBE(on) Base-EmitterOnVoltage IC=-3A;VCE=-3V -2.5 V ICBO CollectorCutoffCurrent VCB=-60V;IE=0 -0.1 mA VCB=-40V;IE=0;TC=150℃ -2.0 ICEO CollectorCutoffCurrent VCE=-30V;IB=0 -0.5 mA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -5 mA hFE-1 DCCurrentGain IC=-0.5A;VCE=-3V 2700 hFE-2 DCCurrentGain IC=-3A;VCE=-3V 750 hFE-3 DCCurrentGain IC=-8A;VCE=-3V 2000